# RD3T050CNTL1

**ROHM Semicon** · MOSFETs · TO-252

RD3T050CNTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±30 V maximum. |
| 2 | Drain | passive | Drain terminal (also the exposed tab) rated for 200 V drain-source voltage and ±5 A continuous drain current at Tc = 25°C. |
| 3 | Source | passive | Source terminal connected to the body diode anode, with a continuous forward current of 5 A at Tc = 25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS |  |  | 200 | V | Ta = 25°C | 1 |
| Continuous drain current | ID | -5 |  | 5 | A | Tc = 25°C | 1 |
| Continuous drain current | ID | -2.7 |  | 2.7 | A | Tc = 100°C | 1 |
| Pulsed drain current | IDP |  |  | 20 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 1 |
| Gate-Source voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Avalanche energy, single pulse | EAS |  |  | 1.83 | mJ | L ≈ 500μH, VDD = 50V, RG = 25Ω, starting Tj = 25°C | 1 |
| Avalanche current, single pulse | IAS |  |  | 2.5 | A | L ≈ 500μH, VDD = 50V, RG = 25Ω, starting Tj = 25°C | 1 |
| Power dissipation | PD |  |  | 29 | W | Tc = 25°C | 1 |
| Junction temperature | Tj |  |  | 150 | °C |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction-case | RthJC |  |  | 4.3 | °C/W |  | 2 |
| Soldering temperature, wave soldering | Tsold |  |  | 265 | °C | for 10s | 2 |
| Drain-Source breakdown voltage | V(BR)DSS | 200 |  |  | V | VGS = 0V, ID = 1mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 10 | μA | VDS = 200V, VGS = 0V, Tj = 25°C | 2 |
| Gate-Source leakage current | IGSS | -100 |  | 100 | nA | VGS = ±30V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 3.25 |  | 5.25 | V | VDS = 10V, ID = 1mA | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 540 | 760 | mΩ | VGS = 10V, ID = 2.5A, pulsed | 2 |
| Forward transfer admittance | /Yfs/ | 1.3 |  |  | S | VDS = 10V, ID = 2.5A, pulsed | 2 |
| Body diode continuous forward current | IS |  |  | 5 | A | TC = 25℃ | 3 |
| Body diode pulse forward current | ISP |  |  | 30 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 3 |
| Body diode forward voltage | VSD |  |  | 1.5 | V | VGS = 0V, IS = 5A | 3 |
| Input capacitance | Ciss |  | 330 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 |
| Output capacitance | Coss |  | 33 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 |
| Reverse transfer capacitance | Crss |  | 15 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 |
| Turn-on delay time | td(on) |  | 13 |  | ns | VDD ≈ 100V, VGS = 10V, ID = 2.5A, RL ≈ 40.2Ω, RG = 10Ω | 3 |
| Rise time | tr |  | 15 |  | ns | VDD ≈ 100V, VGS = 10V, ID = 2.5A, RL ≈ 40.2Ω, RG = 10Ω | 3 |
| Turn-off delay time | td(off) |  | 18 |  | ns | VDD ≈ 100V, VGS = 10V, ID = 2.5A, RL ≈ 40.2Ω, RG = 10Ω | 3 |
| Fall time | tf |  | 8 |  | ns | VDD ≈ 100V, VGS = 10V, ID = 2.5A, RL ≈ 40.2Ω, RG = 10Ω | 3 |
| Total gate charge | Qg |  | 8.3 |  | nC | VDD ≈ 100V, ID = 5A, VGS = 10V | 3 |
| Gate-Source charge | Qgs |  | 3.3 |  | nC | VDD ≈ 100V, ID = 5A, VGS = 10V | 3 |
| Gate-Drain charge | Qgd |  | 3.2 |  | nC | VDD ≈ 100V, ID = 5A, VGS = 10V | 3 |
| Gate plateau voltage | V(plateau) |  | 7.4 |  | V | VDD ≈ 100V, ID = 5A | 3 |
| Reverse recovery time | trr |  | 75 |  | ns | IS = 5A, di/dt = 100A/μs | 3 |
| Reverse recovery charge | Qrr |  | 150 |  | nC | IS = 5A, di/dt = 100A/μs | 3 |

## CAD (KiCad official)

- Symbol: `RD3T050CNTL1`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `rd3t050cntl1-etched.step` / `rd3t050cntl1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rd3t050cntl1.step` / `rd3t050cntl1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/rd3t050cntl1-datasheet.pdf) (14 pp, sha256 `9f3cb282b742b60a`, retrieved 2026-10-31, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rd3t050cntl1-datasheet.pdf)