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RD3T050CNTL1

ROHM Semicon · MOSFETs · TO-252

RD3T050CNTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±30 V maximum.
2 Drain passive Drain terminal (also the exposed tab) rated for 200 V drain-source voltage and ±5 A continuous drain current at Tc = 25°C.
3 Source passive Source terminal connected to the body diode anode, with a continuous forward current of 5 A at Tc = 25°C.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDSS 200 V Ta = 25°C 1
Continuous drain current ID -5 5 A Tc = 25°C 1
Continuous drain current ID -2.7 2.7 A Tc = 100°C 1
Pulsed drain current IDP 20 A Pw ≤ 10μs, Duty cycle ≤ 1% 1
Gate-Source voltage VGSS -30 30 V 1
Avalanche energy, single pulse EAS 1.83 mJ L ≈ 500μH, VDD = 50V, RG = 25Ω, starting Tj = 25°C 1
Avalanche current, single pulse IAS 2.5 A L ≈ 500μH, VDD = 50V, RG = 25Ω, starting Tj = 25°C 1
Power dissipation PD 29 W Tc = 25°C 1
Junction temperature Tj 150 °C 1
Operating junction and storage temperature range Tstg -55 150 °C 1
Thermal resistance, junction-case RthJC 4.3 °C/W 2
Soldering temperature, wave soldering Tsold 265 °C for 10s 2
Drain-Source breakdown voltage V(BR)DSS 200 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 10 μA VDS = 200V, VGS = 0V, Tj = 25°C 2
Gate-Source leakage current IGSS -100 100 nA VGS = ±30V, VDS = 0V 2
Gate threshold voltage VGS(th) 3.25 5.25 V VDS = 10V, ID = 1mA 2
Static drain-source on-state resistance RDS(on) 540 760 mΩ VGS = 10V, ID = 2.5A, pulsed 2
Forward transfer admittance /Yfs/ 1.3 S VDS = 10V, ID = 2.5A, pulsed 2
Body diode continuous forward current IS 5 A TC = 25℃ 3
Body diode pulse forward current ISP 30 A Pw ≤ 10μs, Duty cycle ≤ 1% 3
Body diode forward voltage VSD 1.5 V VGS = 0V, IS = 5A 3
Input capacitance Ciss 330 pF VGS = 0V, VDS = 25V, f = 1MHz 3
Output capacitance Coss 33 pF VGS = 0V, VDS = 25V, f = 1MHz 3
Reverse transfer capacitance Crss 15 pF VGS = 0V, VDS = 25V, f = 1MHz 3
Turn-on delay time td(on) 13 ns VDD ≈ 100V, VGS = 10V, ID = 2.5A, RL ≈ 40.2Ω, RG = 10Ω 3
Rise time tr 15 ns VDD ≈ 100V, VGS = 10V, ID = 2.5A, RL ≈ 40.2Ω, RG = 10Ω 3
Turn-off delay time td(off) 18 ns VDD ≈ 100V, VGS = 10V, ID = 2.5A, RL ≈ 40.2Ω, RG = 10Ω 3
Fall time tf 8 ns VDD ≈ 100V, VGS = 10V, ID = 2.5A, RL ≈ 40.2Ω, RG = 10Ω 3
Total gate charge Qg 8.3 nC VDD ≈ 100V, ID = 5A, VGS = 10V 3
Gate-Source charge Qgs 3.3 nC VDD ≈ 100V, ID = 5A, VGS = 10V 3
Gate-Drain charge Qgd 3.2 nC VDD ≈ 100V, ID = 5A, VGS = 10V 3
Gate plateau voltage V(plateau) 7.4 V VDD ≈ 100V, ID = 5A 3
Reverse recovery time trr 75 ns IS = 5A, di/dt = 100A/μs 3
Reverse recovery charge Qrr 150 nC IS = 5A, di/dt = 100A/μs 3

CAD (KiCad official)

  • Symbol: RD3T050CNTL1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rd3t050cntl1-etched.step / rd3t050cntl1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rd3t050cntl1.step / rd3t050cntl1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (14 pp, sha256 9f3cb282b742b60a, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF