component
RD3P175SNFRATL
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
RD3P175SNFRATL
ROHM Semicon · MOSFETs · TO-252
RD3P175SNFRATL from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with ESD protection diode to source; gate-source voltage limited to ±20 V and threshold 1.0 to 2.5 V at VDS = 10 V, ID = 1 mA. |
| 2 | Drain | passive | Drain terminal (also the exposed tab) rated for VDSS of 100 V and continuous drain current of ±17.5 A. |
| 3 | Source | passive | Source terminal connected to the body diode anode, with continuous forward current of 17.5 A and pulsed 35 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 100 | V | Ta = 25°C | 1 | ||
| Continuous drain current | ID | -17.5 | 17.5 | A | Ta = 25°C, limited only by maximum temperature allowed | 1 | |
| Pulsed drain current | IDP | -35 | 35 | A | Pw≦10μs, Duty cycle≦1% | 1 | |
| Gate-Source voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Power dissipation | PD | 20 | W | TC=25°C | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RthJC | 6.25 | ℃/W | TC=25°C | 2 | ||
| Drain-Source breakdown voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 1mA | 2 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | 116.9 | mV/℃ | ID = 1mA referenced to 25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate-Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | -3.6 | mV/℃ | ID = 1mA referenced to 25℃ | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 75 | 105 | mΩ | VGS = 10V, ID = 8.8A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 80 | 112 | mΩ | VGS = 4.5V, ID = 8.8A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 85 | 119 | mΩ | VGS = 4V, ID = 8.8A, pulsed | 2 | |
| Gate resistance | RG | 6 | Ω | f = 1MHz, open drain | 2 | ||
| Forward transfer admittance | /Yfs/ | 5 | S | VDS = 10V, ID = 8.8A, pulsed | 2 | ||
| Input capacitance | Ciss | 950 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 | ||
| Output capacitance | Coss | 85 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 55 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 | ||
| Turn-on delay time | td(on) | 10 | ns | VDD ⋍ 50V, VGS = 10V, ID = 8.8A, RL ⋍ 5.7Ω, RG = 10Ω | 3 | ||
| Rise time | tr | 25 | ns | VDD ⋍ 50V, VGS = 10V, ID = 8.8A, RL ⋍ 5.7Ω, RG = 10Ω | 3 | ||
| Turn-off delay time | td(off) | 60 | ns | VDD ⋍ 50V, VGS = 10V, ID = 8.8A, RL ⋍ 5.7Ω, RG = 10Ω | 3 | ||
| Fall time | tf | 50 | ns | VDD ⋍ 50V, VGS = 10V, ID = 8.8A, RL ⋍ 5.7Ω, RG = 10Ω | 3 | ||
| Total gate charge | Qg | 24 | nC | VDD ⋍ 50V, ID = 17.5A, VGS = 10V | 3 | ||
| Gate-Source charge | Qgs | 3 | nC | VDD ⋍ 50V, ID = 17.5A, VGS = 10V | 3 | ||
| Gate-Drain charge | Qgd | 6 | nC | VDD ⋍ 50V, ID = 17.5A, VGS = 10V | 3 | ||
| Body diode continuous forward current | IS | 17.5 | A | Ta = 25℃ | 3 | ||
| Body diode pulse forward current | ISP | 35 | A | Pw≦10μs, Duty cycle≦1% | 3 | ||
| Body diode forward voltage | VSD | 1.5 | V | VGS = 0V, IS = 17.5A, pulsed | 3 |
CAD (KiCad official)
- Symbol:
RD3P175SNFRATL - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rd3p175snfratl-etched.step/rd3p175snfratl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rd3p175snfratl.step/rd3p175snfratl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
53825f8668d39033, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RD3P175SNFRATL
**ROHM Semicon** · MOSFETs · TO-252
RD3P175SNFRATL from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with ESD protection diode to source; gate-source voltage limited to ±20 V and threshold 1.0 to 2.5 V at VDS = 10 V, ID = 1 mA. |
| 2 | Drain | passive | Drain terminal (also the exposed tab) rated for VDSS of 100 V and continuous drain current of ±17.5 A. |
| 3 | Source | passive | Source terminal connected to the body diode anode, with continuous forward current of 17.5 A and pulsed 35 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | | | 100 | V | Ta = 25°C | 1 |
| Continuous drain current | ID | -17.5 | | 17.5 | A | Ta = 25°C, limited only by maximum temperature allowed | 1 |
| Pulsed drain current | IDP | -35 | | 35 | A | Pw≦10μs, Duty cycle≦1% | 1 |
| Gate-Source voltage | VGSS | -20 | | 20 | V | Ta = 25°C | 1 |
| Power dissipation | PD | | | 20 | W | TC=25°C | 1 |
| Junction temperature | Tj | | | 150 | ℃ | | 1 |
| Operating junction and storage temperature range | Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction-case | RthJC | | | 6.25 | ℃/W | TC=25°C | 2 |
| Drain-Source breakdown voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID = 1mA | 2 |
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | | 116.9 | | mV/℃ | ID = 1mA referenced to 25℃ | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS = 100V, VGS = 0V | 2 |
| Gate-Source leakage current | IGSS | -10 | | 10 | μA | VGS = ±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 1 | | 2.5 | V | VDS = 10V, ID = 1mA | 2 |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | | -3.6 | | mV/℃ | ID = 1mA referenced to 25℃ | 2 |
| Static drain-source on-state resistance | RDS(on) | | 75 | 105 | mΩ | VGS = 10V, ID = 8.8A, pulsed | 2 |
| Static drain-source on-state resistance | RDS(on) | | 80 | 112 | mΩ | VGS = 4.5V, ID = 8.8A, pulsed | 2 |
| Static drain-source on-state resistance | RDS(on) | | 85 | 119 | mΩ | VGS = 4V, ID = 8.8A, pulsed | 2 |
| Gate resistance | RG | | 6 | | Ω | f = 1MHz, open drain | 2 |
| Forward transfer admittance | /Yfs/ | 5 | | | S | VDS = 10V, ID = 8.8A, pulsed | 2 |
| Input capacitance | Ciss | | 950 | | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 |
| Output capacitance | Coss | | 85 | | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 |
| Reverse transfer capacitance | Crss | | 55 | | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 |
| Turn-on delay time | td(on) | | 10 | | ns | VDD ⋍ 50V, VGS = 10V, ID = 8.8A, RL ⋍ 5.7Ω, RG = 10Ω | 3 |
| Rise time | tr | | 25 | | ns | VDD ⋍ 50V, VGS = 10V, ID = 8.8A, RL ⋍ 5.7Ω, RG = 10Ω | 3 |
| Turn-off delay time | td(off) | | 60 | | ns | VDD ⋍ 50V, VGS = 10V, ID = 8.8A, RL ⋍ 5.7Ω, RG = 10Ω | 3 |
| Fall time | tf | | 50 | | ns | VDD ⋍ 50V, VGS = 10V, ID = 8.8A, RL ⋍ 5.7Ω, RG = 10Ω | 3 |
| Total gate charge | Qg | | 24 | | nC | VDD ⋍ 50V, ID = 17.5A, VGS = 10V | 3 |
| Gate-Source charge | Qgs | | 3 | | nC | VDD ⋍ 50V, ID = 17.5A, VGS = 10V | 3 |
| Gate-Drain charge | Qgd | | 6 | | nC | VDD ⋍ 50V, ID = 17.5A, VGS = 10V | 3 |
| Body diode continuous forward current | IS | | | 17.5 | A | Ta = 25℃ | 3 |
| Body diode pulse forward current | ISP | | | 35 | A | Pw≦10μs, Duty cycle≦1% | 3 |
| Body diode forward voltage | VSD | | | 1.5 | V | VGS = 0V, IS = 17.5A, pulsed | 3 |
## CAD (KiCad official)
- Symbol: `RD3P175SNFRATL`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `rd3p175snfratl-etched.step` / `rd3p175snfratl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rd3p175snfratl.step` / `rd3p175snfratl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](docs/rd3p175snfratl-datasheet.pdf) (14 pp, sha256 `53825f8668d39033`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rd3p175snfratl-datasheet.pdf)