# RCP0112

**RealChip** · MOSFETs · SOP-8

RCP0112 from RealChip, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to the body diode anode; ID is 12 A max at TA=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the body diode anode; ID is 12 A max at TA=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the body diode anode; ID is 12 A max at TA=25℃. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS maximum ±20 V, threshold 1.0 to 3.0 V at ID=250μA. |
| 5 | D | passive | Drain of the N-channel MOSFET; VDS maximum 100 V, RDS(ON) below 17 mΩ at VGS=10V. |
| 6 | D | passive | Drain of the N-channel MOSFET; VDS maximum 100 V, RDS(ON) below 17 mΩ at VGS=10V. |
| 7 | D | passive | Drain of the N-channel MOSFET; VDS maximum 100 V, RDS(ON) below 17 mΩ at VGS=10V. |
| 8 | D | passive | Drain of the N-channel MOSFET; VDS maximum 100 V, RDS(ON) below 17 mΩ at VGS=10V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current | ID |  |  | 12 | A | TA=25℃ | 1 |
| Drain Current | ID |  |  | 7.5 | A | TA=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 70 | A |  | 1 |
| Avalanche Energy, Single Pulse | EAS |  |  | 80 | mJ | L=0.5mH | 1 |
| Total Power Dissipation | PD |  |  | 3.1 | W |  | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA |  | 31 | 40 | ℃/W | t≤10S | 1 |
| Thermal Resistance Junction-to-Ambient, Steady-State | RθJA |  | 59 | 75 | ℃/W | Steady-State | 1 |
| Thermal Resistance Junction-to-Lead, Steady-State | RθJL |  | 16 | 24 | ℃/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V, TJ=25℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 3 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 14.5 | 17 | mΩ | VGS=10V, ID=10A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.3 | V | IS=12A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 12 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `RCP0112`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `rcp0112-etched.step` / `rcp0112-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rcp0112.step` / `rcp0112.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [RealChip datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590269423358402560) (5 pp, sha256 `f8d934604b8f3ad0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rcp0112-datasheet.pdf)