component
RCP0112
Public Made by Adomby adom
RealChip MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRCP0112
RealChip · MOSFETs · SOP-8
RCP0112 from RealChip, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to the body diode anode; ID is 12 A max at TA=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the body diode anode; ID is 12 A max at TA=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the body diode anode; ID is 12 A max at TA=25℃. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS maximum ±20 V, threshold 1.0 to 3.0 V at ID=250μA. |
| 5 | D | passive | Drain of the N-channel MOSFET; VDS maximum 100 V, RDS(ON) below 17 mΩ at VGS=10V. |
| 6 | D | passive | Drain of the N-channel MOSFET; VDS maximum 100 V, RDS(ON) below 17 mΩ at VGS=10V. |
| 7 | D | passive | Drain of the N-channel MOSFET; VDS maximum 100 V, RDS(ON) below 17 mΩ at VGS=10V. |
| 8 | D | passive | Drain of the N-channel MOSFET; VDS maximum 100 V, RDS(ON) below 17 mΩ at VGS=10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 100 | V | 1 | |||
| Gate-source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | 12 | A | TA=25℃ | 1 | ||
| Drain Current | ID | 7.5 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 70 | A | 1 | |||
| Avalanche Energy, Single Pulse | EAS | 80 | mJ | L=0.5mH | 1 | ||
| Total Power Dissipation | PD | 3.1 | W | 1 | |||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 31 | 40 | ℃/W | t≤10S | 1 | |
| Thermal Resistance Junction-to-Ambient, Steady-State | RθJA | 59 | 75 | ℃/W | Steady-State | 1 | |
| Thermal Resistance Junction-to-Lead, Steady-State | RθJL | 16 | 24 | ℃/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 3 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 14.5 | 17 | mΩ | VGS=10V, ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.3 | V | IS=12A, VGS=0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 12 | A | 2 |
CAD (KiCad official)
- Symbol:
RCP0112 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
rcp0112-etched.step/rcp0112-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rcp0112.step/rcp0112.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip datasheet (5 pp, sha256
f8d934604b8f3ad0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).