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RCD40N06

Public Made by Adom

by adom

RealChip(正芯半导体) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RCD40N06

RealChip(正芯半导体) · MOSFETs · TO-252

RCD40N06 from RealChip(正芯半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate (G) input Gate terminal of the N-channel trench MOSFET, with gate-source voltage limited to VGS ±25 V per the absolute maximum ratings.
2 Drain (D) passive Drain terminal of the MOSFET, rated for a drain-source voltage of 60 V and a continuous drain current ID of 45 A at TC = 25℃.
3 Source (S) passive Source terminal of the MOSFET, serving as the reference for the gate-source voltage (VGS ±25 V).

Key specifications

Parameter Value
Manufacturer RealChip(正芯半导体)
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID ID 45 A TC = 25℃ 1
Continuous Drain Current ID ID 31 A TC = 100℃ 1
Pulsed Drain Current IDM 180 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Avalanche Energy, Single Pulsed EAS 196 mJ TJ=25℃, VDD=30V, VG=10V, RG=25Ω 1
Power Dissipation PD 68 W TC = 25℃ 1
Thermal Resistance, Junction-to-Case RthJC 2.2 ℃/W 1
Junction Temperature TJ 175 ℃ 1
Storage Temperature Range Tstg -55 175 ℃ 1
Drain-Source Breakdown Voltage VDSS 60 V ID=250μA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V, Tc=25℃ 2
Zero Gate Voltage Drain Current IDSS 5 μA VDS=60V, VGS=0V, Tc=100℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±25V 2
Gate Threshold Voltage VGS(th) 1.1 2.1 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(On) 15 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(On) 19 mΩ VGS=4.5V, ID=20A 2
Maximum Body-Diode Continuous Current IS 45 A 2
Source Current Pulsed ISM 180 A 2
Diode Forward Voltage VSD 0.99 V TJ=25℃, ISD=1A, VGS=0V 2
Reverse Recovery Time trr 24 nS TJ=25℃, IF=15A, di/dt=100A/μs 2
Reverse Recovery Charge Qrr 30 nC TJ=25℃, IF=15A, di/dt=100A/μs 2
Forward Transconductance gFS 18 S VDS=10V, ID=15A 2
Input Capacitance Ciss 1659 pF VGS=0V, VDS=25V, f=1MHz 2
Output Capacitance Coss 180 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse Transfer Capacitance Crss 128 pF VGS=0V, VDS=25V, f=1MHz 2
Total Gate Charge Qg 50 nC VDS=30V, ID=15A, VGS=10V 2
Gate Source Charge Qgs 12 nC VDS=30V, ID=15A, VGS=10V 2
Gate Drain Charge Qgd 23 nC VDS=30V, ID=15A, VGS=10V 2
Turn-On Delay Time td(on) 15 ns VDS=30V, RL=2.5Ω, VGS=10V, RG=3Ω 2
Turn-On Rise Time tr 25 ns VDS=30V, RL=2.5Ω, VGS=10V, RG=3Ω 2
Turn-Off Delay Time td(off) 53 ns VDS=30V, RL=2.5Ω, VGS=10V, RG=3Ω 2
Turn-Off Fall Time tf 23 ns VDS=30V, RL=2.5Ω, VGS=10V, RG=3Ω 2

CAD (KiCad official)

  • Symbol: RCD40N06
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rcd40n06-etched.step / rcd40n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rcd40n06.step / rcd40n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: RealChip(正芯半导体) datasheet (6 pp, sha256 abb70664c9979222, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF