component
RCD40N06
Public Made by Adomby adom
RealChip(正芯半导体) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRCD40N06
RealChip(正芯半导体) · MOSFETs · TO-252
RCD40N06 from RealChip(正芯半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate (G) | input | Gate terminal of the N-channel trench MOSFET, with gate-source voltage limited to VGS ±25 V per the absolute maximum ratings. |
| 2 | Drain (D) | passive | Drain terminal of the MOSFET, rated for a drain-source voltage of 60 V and a continuous drain current ID of 45 A at TC = 25℃. |
| 3 | Source (S) | passive | Source terminal of the MOSFET, serving as the reference for the gate-source voltage (VGS ±25 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip(正芯半导体) |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous Drain Current ID | ID | 45 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current ID | ID | 31 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 180 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Avalanche Energy, Single Pulsed | EAS | 196 | mJ | TJ=25℃, VDD=30V, VG=10V, RG=25Ω | 1 | ||
| Power Dissipation | PD | 68 | W | TC = 25℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RthJC | 2.2 | ℃/W | 1 | |||
| Junction Temperature | TJ | 175 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | VDSS | 60 | V | ID=250μA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V, Tc=25℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VDS=60V, VGS=0V, Tc=100℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±25V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.1 | 2.1 | V | VDS=VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(On) | 15 | mΩ | VGS=10V, ID=20A | 2 | ||
| Static Drain-Source On-Resistance | RDS(On) | 19 | mΩ | VGS=4.5V, ID=20A | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 45 | A | 2 | |||
| Source Current Pulsed | ISM | 180 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.99 | V | TJ=25℃, ISD=1A, VGS=0V | 2 | ||
| Reverse Recovery Time | trr | 24 | nS | TJ=25℃, IF=15A, di/dt=100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 30 | nC | TJ=25℃, IF=15A, di/dt=100A/μs | 2 | ||
| Forward Transconductance | gFS | 18 | S | VDS=10V, ID=15A | 2 | ||
| Input Capacitance | Ciss | 1659 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 180 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 128 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 50 | nC | VDS=30V, ID=15A, VGS=10V | 2 | ||
| Gate Source Charge | Qgs | 12 | nC | VDS=30V, ID=15A, VGS=10V | 2 | ||
| Gate Drain Charge | Qgd | 23 | nC | VDS=30V, ID=15A, VGS=10V | 2 | ||
| Turn-On Delay Time | td(on) | 15 | ns | VDS=30V, RL=2.5Ω, VGS=10V, RG=3Ω | 2 | ||
| Turn-On Rise Time | tr | 25 | ns | VDS=30V, RL=2.5Ω, VGS=10V, RG=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 53 | ns | VDS=30V, RL=2.5Ω, VGS=10V, RG=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 23 | ns | VDS=30V, RL=2.5Ω, VGS=10V, RG=3Ω | 2 |
CAD (KiCad official)
- Symbol:
RCD40N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rcd40n06-etched.step/rcd40n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rcd40n06.step/rcd40n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip(正芯半导体) datasheet (6 pp, sha256
abb70664c9979222, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).