component
RC65D600E
Public Made by Adomby adom
RealChip(正芯半导体) GaN Transistors(GaN HEMT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRC65D600E
RealChip(正芯半导体) · GaN Transistors(GaN HEMT) · TO-252
RC65D600E from RealChip(正芯半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; normally-off GaN HEMT gate with absolute maximum VGS of -20 to +20 V, driven with VGS=10 V for the RDS(on) rating and compatible with standard gate drivers. |
| 2 | S | passive | Source (short middle stub, also connected to the exposed bottom/tab source pad); Package Configuration is listed as Source. |
| 3 | D | passive | Drain; rated for VDSS 650 V (900 V transient) and continuous drain current of 4.8 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip(正芯半导体) |
| Package | TO-252 |
| Category | Gallium Nitride (GaN) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage (breakdown) | V(BL)DSS | 650 | V | VGS= 0V | 4 | ||
| Drain-source on-resistance | RDS(on) | 600 | 720 | mΩ | VGS=10V, ID=1A, TJ=25°C | 4 | |
| Drain-to-source leakage current | IDSS | 10 | μA | VDS=650V, VGS= 0V, TJ=25°C | 4 | ||
| Drain-to-source leakage current | IDSS | 100 | μA | VDS=650V, VGS= 0V, TJ=150°C | 4 | ||
| Gate-to-source forward leakage current | IGSS | -100 | 100 | nA | VGS=±20V | 4 | |
| Drain to source voltage (TJ = -55°C to 150°C) | VDSS | 650 | V | TJ = -55°C to 150°C | 2 | ||
| Drain to source voltage-transient | V(TR)DSS | 900 | V | Off-state spike, duty cycle D<0.01, spike duration <1μs (note a) | 2 | ||
| Gate to source voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous drain current @TC=25°C | ID | 4.8 | A | TC=25°C (note b) | 2 | ||
| Continuous drain current @TC=125°C | ID | 2.1 | A | TC=125°C (note b) | 2 | ||
| Pulse drain current | IDM | 14 | A | pulse width: 100μs | 2 | ||
| Maximum power dissipation | PD | 25 | W | TC=25°C | 2 | ||
| Operating temperature, case | TC | -55 | 150 | °C | 2 | ||
| Operating temperature, junction | TJ | -55 | 150 | °C | 2 | ||
| Storage temperature | TS | -55 | 150 | °C | 2 | ||
| Junction-to-case thermal resistance | Rθ JC | 5 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
RC65D600E - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rc65d600e-etched.step/rc65d600e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rc65d600e.step/rc65d600e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip(正芯半导体) datasheet (10 pp, sha256
9d128e405f2f2af4, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).