# RC1012E

**RealChip** · MOSFETs · SOT-23

RC1012E from RealChip, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, with typical gate-source voltage limited to ±12 V (VGS). |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET, the reference for VGS and the drain current, with the 0.75 A continuous drain current limit stated for the device. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, rated for 20 V drain-source voltage (VDS) and 0.75 A continuous drain current (ID). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V | Ta=25℃ | 1 |
| Typical Gate-Source Voltage | VGS | -12 |  | 12 | V | Ta=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 0.75 | A | Ta=25℃; note 1 | 1 |
| Pulsed Drain Current | IDM |  |  | 1.8 | A | tp=10μs | 1 |
| Power Dissipation | PD |  |  | 350 | mW | Ta=25℃; note 1 | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  |  | 357 | ℃/W | note 1 | 1 |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Lead Temperature for Soldering Purposes | TL |  |  | 260 | ℃ | 1/8 inch duration for 10 s | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS = 20V, VGS = 0V | 2 |
| Gate-body leakage current | IGSS | -20 |  | 20 | µA | VGS = ±10V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 0.35 | 0.54 | 1.1 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-source on-resistance | RDS(on) |  | 270 | 400 | mΩ | VGS = 4.5V, ID = 0.65A | 2 |
| Drain-source on-resistance | RDS(on) |  | 350 | 600 | mΩ | VGS = 2.5V, ID = 0.55A | 2 |
| Drain-source on-resistance | RDS(on) |  | 390 | 800 | mΩ | VGS = 1.8V, ID = 0.45A | 2 |
| Diode forward voltage | VSD |  |  | 1.2 | V | IS = 0.15A, VGS = 0V | 2 |
| Input capacitance | Ciss |  | 79 | 120 | pF |  | 2 |
| Output capacitance | Coss |  | 13 | 20 | pF |  | 2 |
| Reverse transfer capacitance | Crss |  | 9 | 15 | pF | VDS = 16V, VGS = 0V, f = 1MHz | 2 |

## CAD (KiCad official)

- Symbol: `RC1012E`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `rc1012e-etched.step` / `rc1012e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rc1012e.step` / `rc1012e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [RealChip datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590269425057230848) (4 pp, sha256 `db0f9e57f1ea4e84`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rc1012e-datasheet.pdf)