component
RC1012E
Public Made by Adomby adom
RealChip MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 28d ago |
| viewers | 28d ago |
| package.json | 28d ago |
| page.json | 22d ago |
| rc1012e-etched.glb | 28d ago |
| rc1012e-etched.step | 28d ago |
| rc1012e-hero.glb | 28d ago |
| rc1012e-hero.overlay.json | 28d ago |
| rc1012e.glb | 28d ago |
| rc1012e.kicad_mod | 28d ago |
| rc1012e.kicad_sym | 28d ago |
| rc1012e.lbr | 28d ago |
| rc1012e.step | 28d ago |
| README.md | 22d ago |
RC1012E
RealChip · MOSFETs · SOT-23
RC1012E from RealChip, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, with typical gate-source voltage limited to ±12 V (VGS). |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET, the reference for VGS and the drain current, with the 0.75 A continuous drain current limit stated for the device. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, rated for 20 V drain-source voltage (VDS) and 0.75 A continuous drain current (ID). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | Ta=25℃ | 1 | ||
| Typical Gate-Source Voltage | VGS | -12 | 12 | V | Ta=25℃ | 1 | |
| Continuous Drain Current | ID | 0.75 | A | Ta=25℃; note 1 | 1 | ||
| Pulsed Drain Current | IDM | 1.8 | A | tp=10μs | 1 | ||
| Power Dissipation | PD | 350 | mW | Ta=25℃; note 1 | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W | note 1 | 1 | ||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | ℃ | 1/8 inch duration for 10 s | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -20 | 20 | µA | VGS = ±10V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 0.35 | 0.54 | 1.1 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-source on-resistance | RDS(on) | 270 | 400 | mΩ | VGS = 4.5V, ID = 0.65A | 2 | |
| Drain-source on-resistance | RDS(on) | 350 | 600 | mΩ | VGS = 2.5V, ID = 0.55A | 2 | |
| Drain-source on-resistance | RDS(on) | 390 | 800 | mΩ | VGS = 1.8V, ID = 0.45A | 2 | |
| Diode forward voltage | VSD | 1.2 | V | IS = 0.15A, VGS = 0V | 2 | ||
| Input capacitance | Ciss | 79 | 120 | pF | 2 | ||
| Output capacitance | Coss | 13 | 20 | pF | 2 | ||
| Reverse transfer capacitance | Crss | 9 | 15 | pF | VDS = 16V, VGS = 0V, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
RC1012E - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
rc1012e-etched.step/rc1012e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rc1012e.step/rc1012e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip datasheet (4 pp, sha256
db0f9e57f1ea4e84, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).