component
RB521S30YL
Public Made by Adomby adom
Nexperia Schottky Barrier Diodes (SBD), SOD-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRB521S30YL
Nexperia · Schottky Barrier Diodes (SBD) · SOD-523
RB521S30YL from Nexperia, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the Schottky barrier rectifier, marked by the marking bar on the package; VR ≤ 30 V and IF(AV) ≤ 0.2 A. |
| 2 | A | passive | Anode of the Schottky barrier rectifier, with a forward voltage of 500 mV max at IF = 200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-523 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse voltage | VR | 30 | V | Tj = 25 °C | 3 | ||
| Average forward current | IF(AV) | 0.2 | A | δ = 0.5; f = 20 kHz; square wave; Tamb ≤ 120 °C; FR4 PCB, 1 cm2 cathode pad | 3 | ||
| Non-repetitive peak forward current | IFSM | 1 | A | tp = 8.3 ms; half sine wave; JEDEC method; Tj(init) = 25 °C | 3 | ||
| Total power dissipation | Ptot | 275 | mW | Tamb ≤ 25 °C; FR4 PCB, standard footprint | 3 | ||
| Total power dissipation | Ptot | 420 | mW | Tamb ≤ 25 °C; FR4 PCB, 1 cm2 cathode pad | 3 | ||
| Total power dissipation | Ptot | 500 | mW | Tamb ≤ 25 °C; ceramic PCB Al2O3, standard footprint | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Forward voltage | VF | 130 | 190 | mV | IF = 0.1 mA; pulsed tp ≤ 300 μs; δ ≤ 0.02 | 5 | |
| Forward voltage | VF | 190 | 250 | mV | IF = 1 mA; pulsed tp ≤ 300 μs; δ ≤ 0.02 | 5 | |
| Forward voltage | VF | 255 | 300 | mV | IF = 10 mA; pulsed tp ≤ 300 μs; δ ≤ 0.02 | 5 | |
| Forward voltage | VF | 355 | 410 | mV | IF = 100 mA; pulsed tp ≤ 300 μs; δ ≤ 0.02 | 5 | |
| Forward voltage | VF | 420 | 500 | mV | IF = 200 mA; pulsed tp ≤ 300 μs; δ ≤ 0.02 | 5 | |
| Reverse current | IR | 2.5 | 30 | µA | VR = 10 V | 5 | |
| Diode capacitance | Cd | 20 | 25 | pF | VR = 1 V; f = 1 MHz | 5 | |
| Thermal resistance junction to ambient | Rth(j-a) | 455 | K/W | in free air; FR4 PCB, standard footprint | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 300 | K/W | in free air; FR4 PCB, 1 cm2 cathode pad | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 250 | K/W | in free air; ceramic PCB Al2O3, standard footprint | 3 | ||
| Thermal resistance junction to solder point | Rth(j-sp) | 90 | K/W | soldering point of cathode tab | 3 |
CAD (KiCad official)
- Symbol:
RB521S30YL - Footprint:
Diode_SMD:D_SOD-523 - 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files:
rb521s30yl-etched.step/rb521s30yl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rb521s30yl.step/rb521s30yl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (11 pp, sha256
3cb7c09f082eb807, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).