# QS6M4TR

**ROHM Semicon** · MOSFETs · SOT-23-6

QS6M4TR from ROHM Semicon, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Tr1 (Nch) Source | passive | Source of the N-channel MOSFET Tr1; VDSS 30 V, ID ±1.5 A continuous, body diode IS 0.8 A. |
| 2 | Tr1 (Nch) Gate | input | Gate of the N-channel MOSFET Tr1; VGSS ±12 V, threshold 0.5 to 1.5 V, protected by an ESD protection diode. |
| 3 | Tr2 (Pch) Drain | passive | Drain of the P-channel MOSFET Tr2; VDSS −20 V, ID ±1.5 A continuous, ±6.0 A pulsed. |
| 4 | Tr2 (Pch) Source | passive | Source of the P-channel MOSFET Tr2; body diode source current −0.75 A continuous, −6.0 A pulsed. |
| 5 | Tr2 (Pch) Gate | input | Gate of the P-channel MOSFET Tr2; VGSS ±12 V, threshold −0.7 to −2.0 V, protected by an ESD protection diode. |
| 6 | Tr1 (Nch) Drain | passive | Drain of the N-channel MOSFET Tr1; VDSS 30 V, ID ±1.5 A continuous, ±6.0 A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage, Nch | VDSS |  |  | 30 | V | Ta=25°C | 1 |
| Drain-source voltage, Pch | VDSS |  |  | -20 | V | Ta=25°C | 1 |
| Gate-source voltage (Nch and Pch) | VGSS | -12 |  | 12 | V | Ta=25°C | 1 |
| Drain current, continuous (Nch and Pch) | ID | -1.5 |  | 1.5 | A | Ta=25°C | 1 |
| Drain current, pulsed (Nch and Pch) | IDP | -6 |  | 6 | A | Pw≤10µs, duty cycle≤1% | 1 |
| Source current (body diode), continuous, Nch | IS |  |  | 0.8 | A | Ta=25°C | 1 |
| Source current (body diode), continuous, Pch | IS |  |  | -0.75 | A | Ta=25°C | 1 |
| Source current (body diode), pulsed, Nch | ISP |  |  | 6 | A | Pw≤10µs, duty cycle≤1% | 1 |
| Source current (body diode), pulsed, Pch | ISP |  |  | -6 | A | Pw≤10µs, duty cycle≤1% | 1 |
| Total power dissipation, TOTAL | PD |  |  | 1.25 | W | Mounted on a ceramic board | 1 |
| Total power dissipation, per ELEMENT | PD |  |  | 0.9 | W | Mounted on a ceramic board | 1 |
| Channel temperature | Tch |  |  | 150 | °C |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, channel to ambient, TOTAL | Rth(ch-a) |  |  | 100 | °C/W | Channel to ambient, mounted on a ceramic board | 1 |
| Thermal resistance, channel to ambient, ELEMENT | Rth(ch-a) |  |  | 139 | °C/W | Channel to ambient, mounted on a ceramic board | 1 |
| Gate-source leakage, Nch | IGSS | -10 |  | 10 | µA | VGS=±12V / VDS=0V | 2 |
| Drain-source breakdown voltage, Nch | V(BR)DSS | 30 |  |  | V | ID=1mA / VGS=0V | 2 |
| Zero gate voltage drain current, Nch | IDSS |  |  | 1 | µA | VDS=30V / VGS=0V | 2 |
| Gate threshold voltage, Nch | VGS(th) | 0.5 |  | 1.5 | V | VDS=10V / ID=1mA | 2 |
| Static drain-source on-state resistance, Nch | RDS(on) |  | 170 | 230 | mΩ | ID=1.5A / VGS=4.5V | 2 |
| Static drain-source on-state resistance, Nch | RDS(on) |  | 180 | 245 | mΩ | ID=1.5A / VGS=4.0V | 2 |
| Static drain-source on-state resistance, Nch | RDS(on) |  | 260 | 360 | mΩ | ID=1.0A / VGS=2.5V | 2 |
| Forward transfer admittance, Nch | Yfs | 1 |  |  | S | VDS=10V / ID=1.0A | 2 |
| Forward voltage (body diode), Nch | VSD |  |  | 1.2 | V | IS=3.2A / VGS=0V, pulsed | 2 |
| Gate-source leakage, Pch | IGSS | -10 |  | 10 | µA | VGS=±12V / VDS=0V | 3 |
| Drain-source breakdown voltage, Pch | V(BR)DSS | -20 |  |  | V | ID=-1mA / VGS=0V | 3 |
| Zero gate voltage drain current, Pch | IDSS |  |  | -1 | µA | VDS=-20V / VGS=0V | 3 |
| Gate threshold voltage, Pch | VGS(th) | -0.7 |  | -2 | V | VDS=-10V / ID=-1mA | 3 |
| Static drain-source on-state resistance, Pch | RDS(on) |  | 155 | 215 | mΩ | ID=-1.5A / VGS=-4.5V | 3 |
| Static drain-source on-state resistance, Pch | RDS(on) |  | 170 | 235 | mΩ | ID=-1.5A / VGS=-4.0V | 3 |
| Static drain-source on-state resistance, Pch | RDS(on) |  | 310 | 430 | mΩ | ID=-0.75A / VGS=-2.5V | 3 |
| Forward transfer admittance, Pch | Yfs | 1 |  |  | S | VDS=-10V / ID=-0.75A | 3 |
| Forward voltage (body diode), Pch | VSD |  |  | -1.2 | V | IS=-0.75A / VGS=0V, pulsed | 3 |

## CAD (KiCad official)

- Symbol: `QS6M4TR`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `qs6m4tr-etched.step` / `qs6m4tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `qs6m4tr.step` / `qs6m4tr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589945681399222272) (6 pp, sha256 `bae897aabec34058`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/qs6m4tr-datasheet.pdf)