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QS6M4TR

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-23-6. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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QS6M4TR

ROHM Semicon · MOSFETs · SOT-23-6

QS6M4TR from ROHM Semicon, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Tr1 (Nch) Source passive Source of the N-channel MOSFET Tr1; VDSS 30 V, ID ±1.5 A continuous, body diode IS 0.8 A.
2 Tr1 (Nch) Gate input Gate of the N-channel MOSFET Tr1; VGSS ±12 V, threshold 0.5 to 1.5 V, protected by an ESD protection diode.
3 Tr2 (Pch) Drain passive Drain of the P-channel MOSFET Tr2; VDSS −20 V, ID ±1.5 A continuous, ±6.0 A pulsed.
4 Tr2 (Pch) Source passive Source of the P-channel MOSFET Tr2; body diode source current −0.75 A continuous, −6.0 A pulsed.
5 Tr2 (Pch) Gate input Gate of the P-channel MOSFET Tr2; VGSS ±12 V, threshold −0.7 to −2.0 V, protected by an ESD protection diode.
6 Tr1 (Nch) Drain passive Drain of the N-channel MOSFET Tr1; VDSS 30 V, ID ±1.5 A continuous, ±6.0 A pulsed.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage, Nch VDSS 30 V Ta=25°C 1
Drain-source voltage, Pch VDSS -20 V Ta=25°C 1
Gate-source voltage (Nch and Pch) VGSS -12 12 V Ta=25°C 1
Drain current, continuous (Nch and Pch) ID -1.5 1.5 A Ta=25°C 1
Drain current, pulsed (Nch and Pch) IDP -6 6 A Pw≤10µs, duty cycle≤1% 1
Source current (body diode), continuous, Nch IS 0.8 A Ta=25°C 1
Source current (body diode), continuous, Pch IS -0.75 A Ta=25°C 1
Source current (body diode), pulsed, Nch ISP 6 A Pw≤10µs, duty cycle≤1% 1
Source current (body diode), pulsed, Pch ISP -6 A Pw≤10µs, duty cycle≤1% 1
Total power dissipation, TOTAL PD 1.25 W Mounted on a ceramic board 1
Total power dissipation, per ELEMENT PD 0.9 W Mounted on a ceramic board 1
Channel temperature Tch 150 °C 1
Storage temperature Tstg -55 150 °C 1
Thermal resistance, channel to ambient, TOTAL Rth(ch-a) 100 °C/W Channel to ambient, mounted on a ceramic board 1
Thermal resistance, channel to ambient, ELEMENT Rth(ch-a) 139 °C/W Channel to ambient, mounted on a ceramic board 1
Gate-source leakage, Nch IGSS -10 10 µA VGS=±12V / VDS=0V 2
Drain-source breakdown voltage, Nch V(BR)DSS 30 V ID=1mA / VGS=0V 2
Zero gate voltage drain current, Nch IDSS 1 µA VDS=30V / VGS=0V 2
Gate threshold voltage, Nch VGS(th) 0.5 1.5 V VDS=10V / ID=1mA 2
Static drain-source on-state resistance, Nch RDS(on) 170 230 mΩ ID=1.5A / VGS=4.5V 2
Static drain-source on-state resistance, Nch RDS(on) 180 245 mΩ ID=1.5A / VGS=4.0V 2
Static drain-source on-state resistance, Nch RDS(on) 260 360 mΩ ID=1.0A / VGS=2.5V 2
Forward transfer admittance, Nch Yfs 1 S VDS=10V / ID=1.0A 2
Forward voltage (body diode), Nch VSD 1.2 V IS=3.2A / VGS=0V, pulsed 2
Gate-source leakage, Pch IGSS -10 10 µA VGS=±12V / VDS=0V 3
Drain-source breakdown voltage, Pch V(BR)DSS -20 V ID=-1mA / VGS=0V 3
Zero gate voltage drain current, Pch IDSS -1 µA VDS=-20V / VGS=0V 3
Gate threshold voltage, Pch VGS(th) -0.7 -2 V VDS=-10V / ID=-1mA 3
Static drain-source on-state resistance, Pch RDS(on) 155 215 mΩ ID=-1.5A / VGS=-4.5V 3
Static drain-source on-state resistance, Pch RDS(on) 170 235 mΩ ID=-1.5A / VGS=-4.0V 3
Static drain-source on-state resistance, Pch RDS(on) 310 430 mΩ ID=-0.75A / VGS=-2.5V 3
Forward transfer admittance, Pch Yfs 1 S VDS=-10V / ID=-0.75A 3
Forward voltage (body diode), Pch VSD -1.2 V IS=-0.75A / VGS=0V, pulsed 3

CAD (KiCad official)

  • Symbol: QS6M4TR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: qs6m4tr-etched.step / qs6m4tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); qs6m4tr.step / qs6m4tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (6 pp, sha256 bae897aabec34058, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF