QS6K1TR-VB

{
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  "type": "component",
  "slug": "qs6k1tr-vb",
  "title": "QS6K1TR-VB",
  "brief": "VBsemi Elec MOSFETs, TSOP-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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    "mpn": "QS6K1TR-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TSOP-6",
    "pin_count": 6,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603381065579053056",
    "parts": {
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      "footprint": "qs6k1tr-vb.kicad_mod",
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      "model_3d_step_plain": "qs6k1tr-vb.step",
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    "pins": [
      {
        "number": "1",
        "name": "G1",
        "type": "input",
        "description": "Gate of MOSFET 1. Insulated gate control input; VGS(th) 0.4 V to 1.5 V (typ), absolute maximum VGS = ±12 V. Drive with 4.5 V or higher for full enhancement (RDS(on) = 22 mΩ)."
      },
      {
        "number": "2",
        "name": "S2",
        "type": "passive",
        "description": "Source of MOSFET 2. Low-side/source terminal of the second N-channel MOSFET; body-diode anode of MOSFET 2."
      },
      {
        "number": "3",
        "name": "G2",
        "type": "input",
        "description": "Gate of MOSFET 2. Insulated gate control input; VGS(th) 0.4 V to 1.5 V (typ), absolute maximum VGS = ±12 V. Drive with 4.5 V or higher for full enhancement (RDS(on) = 22 mΩ)."
      },
      {
        "number": "4",
        "name": "D2",
        "type": "passive",
        "description": "Drain of MOSFET 2. High-side/drain terminal of the second N-channel MOSFET; body-diode cathode of MOSFET 2. VDS max = 20 V, ID up to 6.0 A at TC = 25 °C."
      },
      {
        "number": "5",
        "name": "S1",
        "type": "passive",
        "description": "Source of MOSFET 1. Low-side/source terminal of the first N-channel MOSFET; body-diode anode of MOSFET 1."
      },
      {
        "number": "6",
        "name": "D1",
        "type": "passive",
        "description": "Drain of MOSFET 1. High-side/drain terminal of the first N-channel MOSFET; body-diode cathode of MOSFET 1. VDS max = 20 V, ID up to 6.0 A at TC = 25 °C."
      }
    ],
    "provenance": {
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        "sha256": "1c193e17a710efb3",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 6,
        "described": 6,
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        "refuses_to_fabricate": true
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        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
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        "sha256": "1c9b13e7787bad69d987f81501759be5faaee754f4ad55aa7da0fc2259cdb0ff",
        "checked": "2026-10-07",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "TSOP-6",
      "Category": "Transistors/Thyristors",
      "Pins": "6"
    }
  },
  "variants": [
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      "mpn": "QS6K1TR-VB",
      "kind": "packaging"
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  "discovery_pitch": "QS6K1TR-VB (VBsemi Elec) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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  "updated_at": "2026-09-25T04:39:11.814Z"
}