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QS6K1TR-VB

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VBsemi Elec MOSFETs, TSOP-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsqs6k1tr-vb
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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs qs6k1tr-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers qs6k1tr-vb: viewers · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json qs6k1tr-vb: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 1mo ago
qs6k1tr-vb-etched.fit.json qs6k1tr-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
qs6k1tr-vb-etched.glb qs6k1tr-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
qs6k1tr-vb-etched.step qs6k1tr-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
qs6k1tr-vb.glb Publish 0.1.0 · Ray 1mo ago
qs6k1tr-vb.kicad_mod Publish 0.1.0 · Ray 1mo ago
qs6k1tr-vb.kicad_sym Publish 0.1.0 · Ray 1mo ago
qs6k1tr-vb.lbr Publish 0.1.0 · Ray 1mo ago
qs6k1tr-vb.step Publish 0.1.0 · Ray 1mo ago
README.md qs6k1tr-vb: laser-etched CAD + chip hero (factory 2.0.0 backfill) · Ray 1mo ago

QS6K1TR-VB

VBsemi Elec · MOSFETs · TSOP-6

QS6K1TR-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1. Insulated gate control input; VGS(th) 0.4 V to 1.5 V (typ), absolute maximum VGS = ±12 V. Drive with 4.5 V or higher for full enhancement (RDS(on) = 22 mΩ).
2 S2 passive Source of MOSFET 2. Low-side/source terminal of the second N-channel MOSFET; body-diode anode of MOSFET 2.
3 G2 input Gate of MOSFET 2. Insulated gate control input; VGS(th) 0.4 V to 1.5 V (typ), absolute maximum VGS = ±12 V. Drive with 4.5 V or higher for full enhancement (RDS(on) = 22 mΩ).
4 D2 passive Drain of MOSFET 2. High-side/drain terminal of the second N-channel MOSFET; body-diode cathode of MOSFET 2. VDS max = 20 V, ID up to 6.0 A at TC = 25 °C.
5 S1 passive Source of MOSFET 1. Low-side/source terminal of the first N-channel MOSFET; body-diode anode of MOSFET 1.
6 D1 passive Drain of MOSFET 1. High-side/drain terminal of the first N-channel MOSFET; body-diode cathode of MOSFET 1. VDS max = 20 V, ID up to 6.0 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • QS6K1TR-VB

CAD (KiCad official)

  • Symbol: QS6K1TR-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: qs6k1tr-vb-etched.step / qs6k1tr-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); qs6k1tr-vb.step / qs6k1tr-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 1c193e17a710efb3, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF