main
Ray qm2415k-vb: specified limits as data (metadata.characteristics, 46 rows from the datasheet) e231c69 24d ago
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  "slug": "qm2415k-vb",
  "title": "QM2415K-VB",
  "brief": "VBsemi Elec MOSFETs, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
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    "manufacturer": "VBsemi Elec",
    "package": "SOT-23",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated MOSFET control terminal. Gate-source threshold VGS(th) is -0.5 V to -1.5 V; absolute maximum VGS is ±12 V."
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      {
        "number": "2",
        "name": "S",
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        "description": "Source. Reference terminal for the P-channel MOSFET; anode of the intrinsic body diode (VSD ≈ -0.8 V typ at IS = -3.1 A). Continuous source-drain diode current up to -2.1 A at TC = 25 °C."
      },
      {
        "number": "3",
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      "Manufacturer": "VBsemi Elec",
      "Package": "SOT-23",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
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          "name": "Drain-Source Voltage",
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          "name": "Continuous Drain Current",
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          "name": "Pulsed Drain Current",
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          "min": -10,
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          "name": "Maximum Power Dissipation",
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          "unit": "W",
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          "name": "Maximum Power Dissipation",
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          "name": "Operating Junction and Storage Temperature Range",
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          "name": "Maximum Junction-to-Ambient (5 s)",
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          "name": "Maximum Junction-to-Foot (Drain), Steady State",
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          "name": "Maximum Junction-to-Ambient, Steady State",
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          "min": null,
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        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "VDS",
          "kind": "electrical",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": null,
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        {
          "name": "Gate-Source Threshold Voltage",
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          "kind": "electrical",
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          "name": "Gate-Source Leakage",
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          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
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          "conditions": "VDS = 0 V, VGS = ±12 V",
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          "conditions": "VDS = -5 V, VGS = -4.5 V",
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          "min": null,
          "typ": null,
          "max": 0.06,
          "conditions": "VGS = -10 V, ID = -3 A",
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        {
          "name": "Drain-Source On-State Resistance",
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          "kind": "electrical",
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          "min": null,
          "typ": null,
          "max": 0.065,
          "conditions": "VGS = -4.5 V, ID = -2.5 A",
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          "typ": null,
          "max": 0.08,
          "conditions": "VGS = -2.5 V, ID = -2 A",
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          "name": "Gate Resistance",
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          "kind": "electrical",
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          "min": 0.9,
          "typ": 4.4,
          "max": 8.8,
          "conditions": "f = 1 MHz",
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          "name": "Continuous Source-Drain Diode Current",
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          "typ": null,
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          "min": null,
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          "symbol": "trr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 23,
          "max": 35,
          "conditions": "IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C",
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          "name": "Body Diode Reverse Recovery Charge",
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          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 12,
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          "conditions": "IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C",
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          "max": 33,
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          "name": "Rise Time",
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          "conditions": "VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω",
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          "conditions": "VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω",
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          "name": "Drain-Source Voltage Temperature Coefficient",
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          "min": null,
          "typ": 13.4,
          "max": null,
          "conditions": "ID = -250 µA",
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          "name": "Gate-Source Threshold Voltage Temperature Coefficient",
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          "min": null,
          "typ": 2.9,
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          "name": "Forward Transconductance",
          "symbol": "gfs",
          "kind": "electrical",
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          "min": null,
          "typ": 15,
          "max": null,
          "conditions": "VDS = -5 V, ID = -3 A",
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        },
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          "name": "Input Capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
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          "min": null,
          "typ": 835,
          "max": null,
          "conditions": "VDS = -10 V, VGS = 0 V, f = 1 MHz",
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        {
          "name": "Output Capacitance",
          "symbol": "Coss",
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          "min": null,
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          "name": "Reverse Transfer Capacitance",
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          "typ": 155,
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          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 10,
          "max": null,
          "conditions": "VDS = -10 V, VGS = -4.5 V, ID = -3.1 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Total Gate Charge",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 6.4,
          "max": null,
          "conditions": "VDS = -10 V, VGS = -2.5 V, ID = -3.1 A",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Gate-Source Charge",
          "symbol": "Qgs",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 1.7,
          "max": null,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Drain Charge",
          "symbol": "Qgd",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 3.4,
          "max": null,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
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