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QM2415K-VB

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VBsemi Elec MOSFETs, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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page.json qm2415k-vb: specified limits as data (metadata.characteristics, 46 rows from the datasheet) · Ray 24d ago
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README.md qm2415k-vb: specified limits as data (metadata.characteristics, 46 rows from the datasheet) · Ray 24d ago

QM2415K-VB

VBsemi Elec · MOSFETs · SOT-23

QM2415K-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOSFET control terminal. Gate-source threshold VGS(th) is -0.5 V to -1.5 V; absolute maximum VGS is ±12 V.
2 S passive Source. Reference terminal for the P-channel MOSFET; anode of the intrinsic body diode (VSD ≈ -0.8 V typ at IS = -3.1 A). Continuous source-drain diode current up to -2.1 A at TC = 25 °C.
3 D passive Drain. Switched terminal of the P-channel MOSFET; cathode of the intrinsic body diode. VDS absolute maximum is -20 V; continuous ID up to -4 A at TC = 25 °C (package-limited).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • QM2415K-VB

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -4 A TC = 25 °C 1
Continuous Drain Current ID -3.2 A TC = 70 °C 1
Continuous Drain Current ID -3.5 A t = 5 s, Tb,A = 25 °C 1
Continuous Drain Current ID -2.5 A t = 5 s, Tb,A = 70 °C 1
Pulsed Drain Current IDM -10 A 1
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1 A t = 5 s, Tb,A = 25 °C 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W t = 5 s, Tb,A = 25 °C 1
Maximum Power Dissipation PD 0.8 W t = 5 s, Tb,A = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (5 s) RthJA 75 100 °C/W t = 5 s (notes b, d) 1
Maximum Junction-to-Foot (Drain), Steady State RthJF 40 50 °C/W Steady state 1
Maximum Junction-to-Ambient, Steady State RthJA 166 °C/W Steady state (note d) 1
Drain-Source Breakdown Voltage VDS -20 V VDS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -1.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -10 A VDS = -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.06 Ω VGS = -10 V, ID = -3 A 2
Drain-Source On-State Resistance RDS(on) 0.065 Ω VGS = -4.5 V, ID = -2.5 A 2
Drain-Source On-State Resistance RDS(on) 0.08 Ω VGS = -2.5 V, ID = -2 A 2
Gate Resistance Rg 0.9 4.4 8.8 Ω f = 1 MHz 2
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM -10 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -3.1 A 2
Body Diode Reverse Recovery Time trr 23 35 ns IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 12 20 nC IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Turn-On Delay Time td(on) 22 33 ns VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 20 30 ns VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 28 42 ns VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -10 V, RL = 2.4 Ω, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Drain-Source Voltage Temperature Coefficient ΔVDS/ΔTJ 13.4 mV/°C ID = -250 µA 2
Gate-Source Threshold Voltage Temperature Coefficient ΔVGS(th)/ΔTJ 2.9 2
Forward Transconductance gfs 15 S VDS = -5 V, ID = -3 A 2
Input Capacitance Ciss 835 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 180 pF 2
Reverse Transfer Capacitance Crss 155 pF 2
Total Gate Charge Qg 10 nC VDS = -10 V, VGS = -4.5 V, ID = -3.1 A 2
Total Gate Charge Qg 6.4 nC VDS = -10 V, VGS = -2.5 V, ID = -3.1 A 2
Gate-Source Charge Qgs 1.7 nC 2
Gate-Drain Charge Qgd 3.4 nC 2

CAD (KiCad official)

  • Symbol: QM2415K-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: qm2415k-vb-etched.step / qm2415k-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); qm2415k-vb.step / qm2415k-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 092802455c12ea93, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF