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PZ0703EK

NIKO Semicon · MOSFETs · DFN-8-EP(6.1x5.2)

PZ0703EK from NIKO Semicon, in a DFN-8-EP(6.1x5.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three source pins on the PDFN 5x6P package (continuous drain current -70A, package limit -51A).
2 S passive Source of the P-channel MOSFET, one of three source pins on the PDFN 5x6P package (continuous drain current -70A, package limit -51A).
3 S passive Source of the P-channel MOSFET, one of three source pins on the PDFN 5x6P package (continuous drain current -70A, package limit -51A).
4 G input ESD-protected gate; gate-source voltage limit is ±20V and the gate threshold voltage is -1 to -3V.
5 D passive Drain of the P-channel MOSFET, one of four drain pins; drain-source voltage limit is -30V.
6 D passive Drain of the P-channel MOSFET, one of four drain pins; drain-source voltage limit is -30V.
7 D passive Drain of the P-channel MOSFET, one of four drain pins; drain-source voltage limit is -30V.
8 D passive Drain of the P-channel MOSFET, one of four drain pins; drain-source voltage limit is -30V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer NIKO Semicon
Package DFN-8-EP(6.1x5.2)
Category Transistors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -70 A TC = 25 °C 1
Continuous Drain Current ID -56 A TC = 100 °C 1
Continuous Drain Current ID -13 A TA = 25 °C 1
Continuous Drain Current ID -10 A TA = 70 °C 1
Pulsed Drain Current IDM -150 A 1
Avalanche Current IAS -71 A 1
Avalanche Energy EAS 252 mJ L = 0.1mH 1
Power Dissipation PD 50 W TC = 25 °C 1
Power Dissipation PD 32 W TC = 100 °C 1
Power Dissipation PD 2.5 W TA = 25 °C 1
Power Dissipation PD 1.6 W TA = 70 °C 1
Operating Junction & Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Ambient Thermal Resistance RqJA 50 °C / W 2
Junction-to-Case Thermal Resistance RqJC 2.5 °C / W 2
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0V, ID = -250mA 2
Gate Threshold Voltage VGS(th) -1 -1.4 -3 V VDS = VGS, ID = -250mA 2
Gate-Body Leakage IGSS 30 mA VDS = 0V, VGS = ±16V 2
Zero Gate Voltage Drain Current IDSS -1 mA VDS = -24V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS -10 mA VDS = -20V, VGS = 0V , TJ = 125 °C 2
Drain-Source On-State Resistance RDS(ON) 3.8 7 mΩ VGS = -10V, ID = -20A 2
Drain-Source On-State Resistance RDS(ON) 5.7 10 mΩ VGS = -4.5V, ID = -20A 2
Forward Transconductance gfs 65 S VDS = -5V, ID = -12A 2
Input Capacitance Ciss 5210 pF VGS = 0V, VDS = -15V, f = 1MHz 2
Output Capacitance Coss 960 pF VGS = 0V, VDS = -15V, f = 1MHz 2
Reverse Transfer Capacitance Crss 890 pF VGS = 0V, VDS = -15V, f = 1MHz 2
Total Gate Charge Qg 121 nC VGS = 10V, VDS = -15V, ID = -20A 2
Total Gate Charge Qg 64 nC VGS = 4.5V, VDS = -15V, ID = -20A 2
Gate-Source Charge Qgs 12 nC VDS = -15V, ID = -20A 2
Gate-Drain Charge Qgd 27 nC VDS = -15V, ID = -20A 2
Turn-On Delay Time td(on) 33 nS VDS = -15V, ID @ -20A, VGS = -10V, RGS = 6Ω 2
Rise Time tr 25 nS VDS = -15V, ID @ -20A, VGS = -10V, RGS = 6Ω 2
Turn-Off Delay Time td(off) 100 nS VDS = -15V, ID @ -20A, VGS = -10V, RGS = 6Ω 2
Fall Time tf 45 nS VDS = -15V, ID @ -20A, VGS = -10V, RGS = 6Ω 2
Diode Continuous Current IS -70 A TJ = 25 °C 3
Diode Forward Voltage VSD -1.3 V IF = -20A, VGS = 0V 3
Reverse Recovery Time trr 26.5 nS IF = -20A, dlF/dt = 100A / μS 3
Reverse Recovery Charge Qrr 16 nC IF = -20A, dlF/dt = 100A / μS 3

CAD (KiCad official)

  • Symbol: PZ0703EK
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8-EP(6.1x5.2) (KiCad packages3D, STEP)
  • 3D model files: pz0703ek-etched.step / pz0703ek-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pz0703ek.step / pz0703ek.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NIKO Semicon datasheet (6 pp, sha256 d7f4fe7dac033b0a, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF