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PZ0703EK
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NIKO Semicon MOSFETs, DFN-8-EP(6.1x5.2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPZ0703EK
NIKO Semicon · MOSFETs · DFN-8-EP(6.1x5.2)
PZ0703EK from NIKO Semicon, in a DFN-8-EP(6.1x5.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins on the PDFN 5x6P package (continuous drain current -70A, package limit -51A). |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins on the PDFN 5x6P package (continuous drain current -70A, package limit -51A). |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins on the PDFN 5x6P package (continuous drain current -70A, package limit -51A). |
| 4 | G | input | ESD-protected gate; gate-source voltage limit is ±20V and the gate threshold voltage is -1 to -3V. |
| 5 | D | passive | Drain of the P-channel MOSFET, one of four drain pins; drain-source voltage limit is -30V. |
| 6 | D | passive | Drain of the P-channel MOSFET, one of four drain pins; drain-source voltage limit is -30V. |
| 7 | D | passive | Drain of the P-channel MOSFET, one of four drain pins; drain-source voltage limit is -30V. |
| 8 | D | passive | Drain of the P-channel MOSFET, one of four drain pins; drain-source voltage limit is -30V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NIKO Semicon |
| Package | DFN-8-EP(6.1x5.2) |
| Category | Transistors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -70 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -56 | A | TC = 100 °C | 1 | ||
| Continuous Drain Current | ID | -13 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | -10 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | -150 | A | 1 | |||
| Avalanche Current | IAS | -71 | A | 1 | |||
| Avalanche Energy | EAS | 252 | mJ | L = 0.1mH | 1 | ||
| Power Dissipation | PD | 50 | W | TC = 25 °C | 1 | ||
| Power Dissipation | PD | 32 | W | TC = 100 °C | 1 | ||
| Power Dissipation | PD | 2.5 | W | TA = 25 °C | 1 | ||
| Power Dissipation | PD | 1.6 | W | TA = 70 °C | 1 | ||
| Operating Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RqJA | 50 | °C / W | 2 | |||
| Junction-to-Case Thermal Resistance | RqJC | 2.5 | °C / W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -250mA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.4 | -3 | V | VDS = VGS, ID = -250mA | 2 |
| Gate-Body Leakage | IGSS | 30 | mA | VDS = 0V, VGS = ±16V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | mA | VDS = -24V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | mA | VDS = -20V, VGS = 0V , TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 3.8 | 7 | mΩ | VGS = -10V, ID = -20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 5.7 | 10 | mΩ | VGS = -4.5V, ID = -20A | 2 | |
| Forward Transconductance | gfs | 65 | S | VDS = -5V, ID = -12A | 2 | ||
| Input Capacitance | Ciss | 5210 | pF | VGS = 0V, VDS = -15V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 960 | pF | VGS = 0V, VDS = -15V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 890 | pF | VGS = 0V, VDS = -15V, f = 1MHz | 2 | ||
| Total Gate Charge | Qg | 121 | nC | VGS = 10V, VDS = -15V, ID = -20A | 2 | ||
| Total Gate Charge | Qg | 64 | nC | VGS = 4.5V, VDS = -15V, ID = -20A | 2 | ||
| Gate-Source Charge | Qgs | 12 | nC | VDS = -15V, ID = -20A | 2 | ||
| Gate-Drain Charge | Qgd | 27 | nC | VDS = -15V, ID = -20A | 2 | ||
| Turn-On Delay Time | td(on) | 33 | nS | VDS = -15V, ID @ -20A, VGS = -10V, RGS = 6Ω | 2 | ||
| Rise Time | tr | 25 | nS | VDS = -15V, ID @ -20A, VGS = -10V, RGS = 6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 100 | nS | VDS = -15V, ID @ -20A, VGS = -10V, RGS = 6Ω | 2 | ||
| Fall Time | tf | 45 | nS | VDS = -15V, ID @ -20A, VGS = -10V, RGS = 6Ω | 2 | ||
| Diode Continuous Current | IS | -70 | A | TJ = 25 °C | 3 | ||
| Diode Forward Voltage | VSD | -1.3 | V | IF = -20A, VGS = 0V | 3 | ||
| Reverse Recovery Time | trr | 26.5 | nS | IF = -20A, dlF/dt = 100A / μS | 3 | ||
| Reverse Recovery Charge | Qrr | 16 | nC | IF = -20A, dlF/dt = 100A / μS | 3 |
CAD (KiCad official)
- Symbol:
PZ0703EK - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8-EP(6.1x5.2) (KiCad packages3D, STEP)
- 3D model files:
pz0703ek-etched.step/pz0703ek-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pz0703ek.step/pz0703ek.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NIKO Semicon datasheet (6 pp, sha256
d7f4fe7dac033b0a, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).