component
PT4606-SOP8
Public Made by Adomby adom
PUOLOP MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PT4606-SOP8
PUOLOP · MOSFETs · SOP-8
PT4606-SOP8 from PUOLOP, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1 of the complementary pair; the device ratings are VDS 30 V (N-channel) and -30 V (P-channel) with VGS ±20 V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is rated at ±20 V. |
| 3 | S2 | passive | Source terminal of MOSFET 2 of the complementary pair; the device ratings are VDS 30 V (N-channel) and -30 V (P-channel) with VGS ±20 V. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is rated at ±20 V. |
| 5 | D2 | passive | Drain terminal of MOSFET 2; drain-source voltage is rated at 30 V or -30 V depending on channel. |
| 6 | D2 | passive | Drain terminal of MOSFET 2 (second pin, internally tied to pin 5); drain-source voltage is rated at 30 V or -30 V depending on channel. |
| 7 | D1 | passive | Drain terminal of MOSFET 1 (second pin, internally tied to pin 8); drain-source voltage is rated at 30 V or -30 V depending on channel. |
| 8 | D1 | passive | Drain terminal of MOSFET 1; drain-source voltage is rated at 30 V or -30 V depending on channel. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PUOLOP |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous (N-Channel) | ID | 6.5 | A | TA = 25 °C | 1 | ||
| Drain Current-Continuous (P-Channel) | ID | -6 | A | TA = 25 °C | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 28 | A | 1 | |||
| Pulsed Drain Current (P-Channel) | IDM | -26 | A | 1 | |||
| Drain-Source Diode Forward Current (N-Channel) | IS | 2.5 | A | 1 | |||
| Drain-Source Diode Forward Current (P-Channel) | IS | -2.3 | A | 1 | |||
| Maximum Power Dissipation | PD | 2 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.2 | W | TA = 75 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 | V | VGS = 0V, ID = 250uA | 2 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | uA | VDS = 24V, VGS = 0V | 2 | ||
| Gate-Body Leakage (N-Channel) | IGSS | 100 | nA | VGS = 20V, VDS = 0V | 2 | ||
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 1.4 | 3 | V | VDS = VGS, ID = 250uA | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 23 | 28 | m | VGS = 10V, ID = 6.5A | 2 | |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 34 | 41 | m | VGS = 4.5V, ID = 5A | 2 | |
| Diode Forward Voltage (N-Channel) | VSD | 1 | V | VGS = 0V, IS = 1.0A | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 | V | VGS = 0V, ID = -250uA | 3 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | uA | VDS = -24V, VGS = 0V | 3 | ||
| Gate-Body Leakage (P-Channel) | IGSS | -100 | nA | VGS = -20V, VDS = 0V | 3 | ||
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1 | -1.5 | -3 | V | VDS = VGS, ID = -250uA | 3 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 27 | 37 | m | VGS = -10V, ID = -6A | 3 | |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 39 | 57 | m | VGS = -4.5V, ID = -5A | 3 | |
| Diode Forward Voltage (P-Channel) | VSD | -1.2 | V | VGS = 0V, IS = -2.3A | 3 | ||
| Forward Transconductance (N-Channel) | gfs | 5.1 | S | VDS = 5V, ID = 5A | 2 | ||
| Input Capacitance (N-Channel) | CISS | 388 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance (N-Channel) | COSS | 62 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance (N-Channel) | CRSS | 58 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Turn-On Delay Time (N-Channel) | tD(ON) | 7 | ns | VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 | 2 | ||
| Rise Time (N-Channel) | tr | 10 | ns | VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 | 2 | ||
| Turn-Off Delay Time (N-Channel) | tD(OFF) | 16 | ns | VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 | 2 | ||
| Fall Time (N-Channel) | tf | 7 | ns | VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 | 2 | ||
| Total Gate Charge (N-Channel) | Qg | 7 | nC | VDS = 10V, ID = 1A, VGS = 10V | 2 | ||
| Gate-Source Charge (N-Channel) | Qgs | 1.6 | nC | VDS = 10V, ID = 1A, VGS = 10V | 2 | ||
| Gate-Drain Charge (N-Channel) | Qgd | 1 | nC | VDS = 10V, ID = 1A, VGS = 10V | 2 | ||
| Forward Transconductance (P-Channel) | gfs | 12.2 | S | VDS = -10V, ID = -6A | 3 | ||
| Input Capacitance (P-Channel) | CISS | 926 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 | ||
| Output Capacitance (P-Channel) | COSS | 119 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance (P-Channel) | CRSS | 97 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 | ||
| Turn-On Delay Time (P-Channel) | tD(ON) | 9.2 | ns | VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 | 3 | ||
| Rise Time (P-Channel) | tr | 5.2 | ns | VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 | 3 | ||
| Turn-Off Delay Time (P-Channel) | tD(OFF) | 41.5 | ns | VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 | 3 | ||
| Fall Time (P-Channel) | tf | 12.8 | ns | VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 | 3 | ||
| Total Gate Charge (P-Channel) | Qg | 18.6 | nC | VDS = -15V, ID = -3A, VGS = -10V | 3 | ||
| Gate-Source Charge (P-Channel) | Qgs | 3.5 | nC | VDS = -15V, ID = -3A, VGS = -10V | 3 | ||
| Gate-Drain Charge (P-Channel) | Qgd | 2.3 | nC | VDS = -15V, ID = -3A, VGS = -10V | 3 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 62.5 | °C/W | Surface mounted on FR4 Board, t 10sec | 1 |
CAD (KiCad official)
- Symbol:
PT4606-SOP8 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
pt4606-sop8-etched.step/pt4606-sop8-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pt4606-sop8.step/pt4606-sop8.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PUOLOP datasheet (7 pp, sha256
cc6c0fceb6c92bdf, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PT4606-SOP8
**PUOLOP** · MOSFETs · SOP-8
PT4606-SOP8 from PUOLOP, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1 of the complementary pair; the device ratings are VDS 30 V (N-channel) and -30 V (P-channel) with VGS ±20 V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is rated at ±20 V. |
| 3 | S2 | passive | Source terminal of MOSFET 2 of the complementary pair; the device ratings are VDS 30 V (N-channel) and -30 V (P-channel) with VGS ±20 V. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is rated at ±20 V. |
| 5 | D2 | passive | Drain terminal of MOSFET 2; drain-source voltage is rated at 30 V or -30 V depending on channel. |
| 6 | D2 | passive | Drain terminal of MOSFET 2 (second pin, internally tied to pin 5); drain-source voltage is rated at 30 V or -30 V depending on channel. |
| 7 | D1 | passive | Drain terminal of MOSFET 1 (second pin, internally tied to pin 8); drain-source voltage is rated at 30 V or -30 V depending on channel. |
| 8 | D1 | passive | Drain terminal of MOSFET 1; drain-source voltage is rated at 30 V or -30 V depending on channel. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PUOLOP |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | | | 30 | V | | 1 |
| Drain-Source Voltage (P-Channel) | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage (N-Channel) | VGS | -20 | | 20 | V | | 1 |
| Gate-Source Voltage (P-Channel) | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous (N-Channel) | ID | | | 6.5 | A | TA = 25 °C | 1 |
| Drain Current-Continuous (P-Channel) | ID | -6 | | | A | TA = 25 °C | 1 |
| Pulsed Drain Current (N-Channel) | IDM | | | 28 | A | | 1 |
| Pulsed Drain Current (P-Channel) | IDM | -26 | | | A | | 1 |
| Drain-Source Diode Forward Current (N-Channel) | IS | | | 2.5 | A | | 1 |
| Drain-Source Diode Forward Current (P-Channel) | IS | -2.3 | | | A | | 1 |
| Maximum Power Dissipation | PD | | | 2 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.2 | W | TA = 75 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 | | | V | VGS = 0V, ID = 250uA | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | uA | VDS = 24V, VGS = 0V | 2 |
| Gate-Body Leakage (N-Channel) | IGSS | | | 100 | nA | VGS = 20V, VDS = 0V | 2 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 1.4 | 3 | V | VDS = VGS, ID = 250uA | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 23 | 28 | m | VGS = 10V, ID = 6.5A | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | 34 | 41 | m | VGS = 4.5V, ID = 5A | 2 |
| Diode Forward Voltage (N-Channel) | VSD | | | 1 | V | VGS = 0V, IS = 1.0A | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 | | | V | VGS = 0V, ID = -250uA | 3 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -1 | uA | VDS = -24V, VGS = 0V | 3 |
| Gate-Body Leakage (P-Channel) | IGSS | | | -100 | nA | VGS = -20V, VDS = 0V | 3 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1 | -1.5 | -3 | V | VDS = VGS, ID = -250uA | 3 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 27 | 37 | m | VGS = -10V, ID = -6A | 3 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | 39 | 57 | m | VGS = -4.5V, ID = -5A | 3 |
| Diode Forward Voltage (P-Channel) | VSD | | | -1.2 | V | VGS = 0V, IS = -2.3A | 3 |
| Forward Transconductance (N-Channel) | gfs | | 5.1 | | S | VDS = 5V, ID = 5A | 2 |
| Input Capacitance (N-Channel) | CISS | | 388 | | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance (N-Channel) | COSS | | 62 | | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance (N-Channel) | CRSS | | 58 | | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 |
| Turn-On Delay Time (N-Channel) | tD(ON) | | 7 | | ns | VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 | 2 |
| Rise Time (N-Channel) | tr | | 10 | | ns | VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 | 2 |
| Turn-Off Delay Time (N-Channel) | tD(OFF) | | 16 | | ns | VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 | 2 |
| Fall Time (N-Channel) | tf | | 7 | | ns | VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 | 2 |
| Total Gate Charge (N-Channel) | Qg | | 7 | | nC | VDS = 10V, ID = 1A, VGS = 10V | 2 |
| Gate-Source Charge (N-Channel) | Qgs | | 1.6 | | nC | VDS = 10V, ID = 1A, VGS = 10V | 2 |
| Gate-Drain Charge (N-Channel) | Qgd | | 1 | | nC | VDS = 10V, ID = 1A, VGS = 10V | 2 |
| Forward Transconductance (P-Channel) | gfs | | 12.2 | | S | VDS = -10V, ID = -6A | 3 |
| Input Capacitance (P-Channel) | CISS | | 926 | | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 |
| Output Capacitance (P-Channel) | COSS | | 119 | | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 |
| Reverse Transfer Capacitance (P-Channel) | CRSS | | 97 | | pF | VDS = -15V, VGS = 0V, f = 1.0MHz | 3 |
| Turn-On Delay Time (P-Channel) | tD(ON) | | 9.2 | | ns | VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 | 3 |
| Rise Time (P-Channel) | tr | | 5.2 | | ns | VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 | 3 |
| Turn-Off Delay Time (P-Channel) | tD(OFF) | | 41.5 | | ns | VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 | 3 |
| Fall Time (P-Channel) | tf | | 12.8 | | ns | VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 | 3 |
| Total Gate Charge (P-Channel) | Qg | | 18.6 | | nC | VDS = -15V, ID = -3A, VGS = -10V | 3 |
| Gate-Source Charge (P-Channel) | Qgs | | 3.5 | | nC | VDS = -15V, ID = -3A, VGS = -10V | 3 |
| Gate-Drain Charge (P-Channel) | Qgd | | 2.3 | | nC | VDS = -15V, ID = -3A, VGS = -10V | 3 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | 62.5 | | °C/W | Surface mounted on FR4 Board, t 10sec | 1 |
## CAD (KiCad official)
- Symbol: `PT4606-SOP8`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `pt4606-sop8-etched.step` / `pt4606-sop8-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pt4606-sop8.step` / `pt4606-sop8.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [PUOLOP datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884323310821376) (7 pp, sha256 `cc6c0fceb6c92bdf`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pt4606-sop8-datasheet.pdf)