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PT4606-SOP8

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PUOLOP MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PT4606-SOP8

PUOLOP · MOSFETs · SOP-8

PT4606-SOP8 from PUOLOP, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET 1 of the complementary pair; the device ratings are VDS 30 V (N-channel) and -30 V (P-channel) with VGS ±20 V.
2 G1 input Gate of MOSFET 1; gate-source voltage is rated at ±20 V.
3 S2 passive Source terminal of MOSFET 2 of the complementary pair; the device ratings are VDS 30 V (N-channel) and -30 V (P-channel) with VGS ±20 V.
4 G2 input Gate of MOSFET 2; gate-source voltage is rated at ±20 V.
5 D2 passive Drain terminal of MOSFET 2; drain-source voltage is rated at 30 V or -30 V depending on channel.
6 D2 passive Drain terminal of MOSFET 2 (second pin, internally tied to pin 5); drain-source voltage is rated at 30 V or -30 V depending on channel.
7 D1 passive Drain terminal of MOSFET 1 (second pin, internally tied to pin 8); drain-source voltage is rated at 30 V or -30 V depending on channel.
8 D1 passive Drain terminal of MOSFET 1; drain-source voltage is rated at 30 V or -30 V depending on channel.

Key specifications

Parameter Value
Manufacturer PUOLOP
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 30 V 1
Drain-Source Voltage (P-Channel) VDS -30 V 1
Gate-Source Voltage (N-Channel) VGS -20 20 V 1
Gate-Source Voltage (P-Channel) VGS -20 20 V 1
Drain Current-Continuous (N-Channel) ID 6.5 A TA = 25 °C 1
Drain Current-Continuous (P-Channel) ID -6 A TA = 25 °C 1
Pulsed Drain Current (N-Channel) IDM 28 A 1
Pulsed Drain Current (P-Channel) IDM -26 A 1
Drain-Source Diode Forward Current (N-Channel) IS 2.5 A 1
Drain-Source Diode Forward Current (P-Channel) IS -2.3 A 1
Maximum Power Dissipation PD 2 W TA = 25 °C 1
Maximum Power Dissipation PD 1.2 W TA = 75 °C 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Drain-Source Breakdown Voltage (N-Channel) BVDSS 30 V VGS = 0V, ID = 250uA 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 uA VDS = 24V, VGS = 0V 2
Gate-Body Leakage (N-Channel) IGSS 100 nA VGS = 20V, VDS = 0V 2
Gate Threshold Voltage (N-Channel) VGS(th) 1 1.4 3 V VDS = VGS, ID = 250uA 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 23 28 m VGS = 10V, ID = 6.5A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 34 41 m VGS = 4.5V, ID = 5A 2
Diode Forward Voltage (N-Channel) VSD 1 V VGS = 0V, IS = 1.0A 2
Drain-Source Breakdown Voltage (P-Channel) BVDSS -30 V VGS = 0V, ID = -250uA 3
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 uA VDS = -24V, VGS = 0V 3
Gate-Body Leakage (P-Channel) IGSS -100 nA VGS = -20V, VDS = 0V 3
Gate Threshold Voltage (P-Channel) VGS(th) -1 -1.5 -3 V VDS = VGS, ID = -250uA 3
Drain-Source On-State Resistance (P-Channel) RDS(on) 27 37 m VGS = -10V, ID = -6A 3
Drain-Source On-State Resistance (P-Channel) RDS(on) 39 57 m VGS = -4.5V, ID = -5A 3
Diode Forward Voltage (P-Channel) VSD -1.2 V VGS = 0V, IS = -2.3A 3
Forward Transconductance (N-Channel) gfs 5.1 S VDS = 5V, ID = 5A 2
Input Capacitance (N-Channel) CISS 388 pF VDS = 15V, VGS = 0V, f = 1.0MHz 2
Output Capacitance (N-Channel) COSS 62 pF VDS = 15V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance (N-Channel) CRSS 58 pF VDS = 15V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time (N-Channel) tD(ON) 7 ns VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 2
Rise Time (N-Channel) tr 10 ns VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 2
Turn-Off Delay Time (N-Channel) tD(OFF) 16 ns VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 2
Fall Time (N-Channel) tf 7 ns VDD = 15V, ID = 1A, VGEN = 10V, RL = 15, RGEN = 6 2
Total Gate Charge (N-Channel) Qg 7 nC VDS = 10V, ID = 1A, VGS = 10V 2
Gate-Source Charge (N-Channel) Qgs 1.6 nC VDS = 10V, ID = 1A, VGS = 10V 2
Gate-Drain Charge (N-Channel) Qgd 1 nC VDS = 10V, ID = 1A, VGS = 10V 2
Forward Transconductance (P-Channel) gfs 12.2 S VDS = -10V, ID = -6A 3
Input Capacitance (P-Channel) CISS 926 pF VDS = -15V, VGS = 0V, f = 1.0MHz 3
Output Capacitance (P-Channel) COSS 119 pF VDS = -15V, VGS = 0V, f = 1.0MHz 3
Reverse Transfer Capacitance (P-Channel) CRSS 97 pF VDS = -15V, VGS = 0V, f = 1.0MHz 3
Turn-On Delay Time (P-Channel) tD(ON) 9.2 ns VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 3
Rise Time (P-Channel) tr 5.2 ns VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 3
Turn-Off Delay Time (P-Channel) tD(OFF) 41.5 ns VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 3
Fall Time (P-Channel) tf 12.8 ns VDD = -15V, ID = -3A, VGEN = -10V, RL = 5, RGEN = 6 3
Total Gate Charge (P-Channel) Qg 18.6 nC VDS = -15V, ID = -3A, VGS = -10V 3
Gate-Source Charge (P-Channel) Qgs 3.5 nC VDS = -15V, ID = -3A, VGS = -10V 3
Gate-Drain Charge (P-Channel) Qgd 2.3 nC VDS = -15V, ID = -3A, VGS = -10V 3
Thermal Resistance, Junction-to-Ambient RthJA 62.5 °C/W Surface mounted on FR4 Board, t 10sec 1

CAD (KiCad official)

  • Symbol: PT4606-SOP8
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: pt4606-sop8-etched.step / pt4606-sop8-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pt4606-sop8.step / pt4606-sop8.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PUOLOP datasheet (7 pp, sha256 cc6c0fceb6c92bdf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF