# PNMT60V02E

**Shanghai Prisemi Elec** · MOSFETs · SOT-23

PNMT60V02E from Shanghai Prisemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is limited to ±20 V and gate-to-source ESD is rated 1000 V HBM (100 pF, 1.5 kΩ). |
| 2 | S | passive | Source of the N-channel MOSFET; maximum body-diode continuous current is 0.2 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is limited to 60 V, with continuous drain current of 0.18 A and pulsed drain current of 0.36 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Prisemi Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 60 |  |  | V | ID =10μA,VGS=0V | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 0.5 | μA | VDS =40V,VGS=0V | 1 |
| Gate-Body Leakage Current | IGSS | -10 |  | 10 | μA | VDS =0V,VGS=±20V | 1 |
| Gate Threshold Voltage | VGS(th) | 0.5 |  | 1.5 | V | VDS =VGS, ID =250μA | 1 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 7.5 | Ω | VGS=5V, ID =0.05A | 1 |
| Diode Forward Voltage | VSD |  | 0.72 | 1 | V |  | 1 |
| Maximum Body-Diode Continuous Current | IS |  |  | 0.2 | A |  | 1 |
| Input Capacitance | CISS |  |  | 40 | pF | VGS=0V, VDS =25V, f=1MHz | 1 |
| Output Capacitance | CDSS |  |  | 20 | pF |  | 1 |
| Reverse Transfer Capacitance | CRSS |  |  | 5 | pF |  | 1 |
| Turn-On Delay Time | td(on) |  |  | 20 | ns | VDS=30V, VGS =10V, RG=25Ω, RL=150Ω, ID =0.2A | 2 |
| Turn-Off Delay Time | td(off) |  |  | 20 | ns |  | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Drain Current Continuous | ID |  |  | 0.18 | A |  | 2 |
| Drain Current Pulsed | ID |  |  | 0.36 | A |  | 2 |
| Total Power Dissipation | PD |  |  | 150 | mW | TA=25℃ | 2 |
| Gate to Source ESD (HBM) | VESD(G-S) |  |  | 1000 | V | HBM_C=100pF,R=1.5KΩ | 2 |

## CAD (KiCad official)

- Symbol: `PNMT60V02E`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pnmt60v02e-etched.step` / `pnmt60v02e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pnmt60v02e.step` / `pnmt60v02e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shanghai Prisemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588945178035949568) (5 pp, sha256 `206d579ea3b0583a`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pnmt60v02e-datasheet.pdf)