component
PNMT60V02E
Public Made by Adomby adom
Shanghai Prisemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPNMT60V02E
Shanghai Prisemi Elec · MOSFETs · SOT-23
PNMT60V02E from Shanghai Prisemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is limited to ±20 V and gate-to-source ESD is rated 1000 V HBM (100 pF, 1.5 kΩ). |
| 2 | S | passive | Source of the N-channel MOSFET; maximum body-diode continuous current is 0.2 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is limited to 60 V, with continuous drain current of 0.18 A and pulsed drain current of 0.36 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Prisemi Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 60 | V | ID =10μA,VGS=0V | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.5 | μA | VDS =40V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VDS =0V,VGS=±20V | 1 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 1.5 | V | VDS =VGS, ID =250μA | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | Ω | VGS=5V, ID =0.05A | 1 | ||
| Diode Forward Voltage | VSD | 0.72 | 1 | V | 1 | ||
| Maximum Body-Diode Continuous Current | IS | 0.2 | A | 1 | |||
| Input Capacitance | CISS | 40 | pF | VGS=0V, VDS =25V, f=1MHz | 1 | ||
| Output Capacitance | CDSS | 20 | pF | 1 | |||
| Reverse Transfer Capacitance | CRSS | 5 | pF | 1 | |||
| Turn-On Delay Time | td(on) | 20 | ns | VDS=30V, VGS =10V, RG=25Ω, RL=150Ω, ID =0.2A | 2 | ||
| Turn-Off Delay Time | td(off) | 20 | ns | 2 | |||
| Drain-Source Voltage | VDS | 60 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current Continuous | ID | 0.18 | A | 2 | |||
| Drain Current Pulsed | ID | 0.36 | A | 2 | |||
| Total Power Dissipation | PD | 150 | mW | TA=25℃ | 2 | ||
| Gate to Source ESD (HBM) | VESD(G-S) | 1000 | V | HBM_C=100pF,R=1.5KΩ | 2 |
CAD (KiCad official)
- Symbol:
PNMT60V02E - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pnmt60v02e-etched.step/pnmt60v02e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pnmt60v02e.step/pnmt60v02e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shanghai Prisemi Elec datasheet (5 pp, sha256
206d579ea3b0583a, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).