# PNMT20V3

**Shanghai Prisemi Elec** · MOSFETs · SOT-23

PNMT20V3 from Shanghai Prisemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; absolute maximum gate-source voltage is ±8 V and the gate threshold voltage is 0.6 V to 1.2 V at ID = 250 µA. |
| 2 | S | passive | Source terminal, the reference for VGS; the maximum continuous source-drain diode forward current is 1.6 A. |
| 3 | D | passive | Drain terminal; maximum drain-source voltage is 20 V, continuous drain current is 3 A and pulsed drain current is 9 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Prisemi Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | ID =250μA,VGS=0V | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS =20V,VGS=0V | 1 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS =0V,VGS=±8V | 1 |
| Gate Threshold Voltage | VGS(th) | 0.6 |  | 1.2 | V | VDS =VGS, ID =250μA | 1 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 0.043 | 0.06 | Ω | VGS=4.5V, ID =2.8A | 1 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 0.052 | 0.115 | Ω | VGS=2.5V, ID =2.0A | 1 |
| Turn-On Delay Time | td(on) |  | 7 | 15 | ns | VDS=10V, VGS =4.5V, RG=6Ω, ID =1A | 1 |
| Turn-Off Delay Time | td(off) |  | 16 | 60 | ns | VDS=10V, VGS =4.5V, RG=6Ω, ID =1A | 1 |
| Turn-On Rise Time | Tr |  | 55 | 80 | ns | VDS=10V, VGS =4.5V, RG=6Ω, ID =1A | 1 |
| Turn-On Fall Time | Tf |  | 20 | 25 | ns | VDS=10V, VGS =4.5V, RG=6Ω, ID =1A | 1 |
| Total Gate Charge | Qg(10) |  | 5.2 | 10 | nC | VDS=10V, VGS =4.5V, ID =3.6A | 1 |
| Drain-Source Diode Forward Voltage | VSD |  | 0.76 | 1.2 | V | VGS=0V,IS=1.0A | 1 |
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 2 |
| Gate-Source Voltage | VGS | -8 |  | 8 | V |  | 2 |
| Drain Current Continuous | ID |  |  | 3 | A |  | 2 |
| Drain Current Pulsed | ID |  |  | 9 | A |  | 2 |
| Total Power Dissipation | PD |  |  | 1.25 | W |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 2 |
| Maximum Junction-to-Ambient | θJA |  |  | 100 | ℃/W | t≤10s | 2 |

## CAD (KiCad official)

- Symbol: `PNMT20V3`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pnmt20v3-etched.step` / `pnmt20v3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pnmt20v3.step` / `pnmt20v3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shanghai Prisemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588880663457484800) (6 pp, sha256 `dd3b2b21a312493f`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pnmt20v3-datasheet.pdf)