component
PNMT20V3
Public Made by Adomby adom
Shanghai Prisemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPNMT20V3
Shanghai Prisemi Elec · MOSFETs · SOT-23
PNMT20V3 from Shanghai Prisemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; absolute maximum gate-source voltage is ±8 V and the gate threshold voltage is 0.6 V to 1.2 V at ID = 250 µA. |
| 2 | S | passive | Source terminal, the reference for VGS; the maximum continuous source-drain diode forward current is 1.6 A. |
| 3 | D | passive | Drain terminal; maximum drain-source voltage is 20 V, continuous drain current is 3 A and pulsed drain current is 9 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Prisemi Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID =250μA,VGS=0V | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS =20V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS =0V,VGS=±8V | 1 | |
| Gate Threshold Voltage | VGS(th) | 0.6 | 1.2 | V | VDS =VGS, ID =250μA | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.043 | 0.06 | Ω | VGS=4.5V, ID =2.8A | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.052 | 0.115 | Ω | VGS=2.5V, ID =2.0A | 1 | |
| Turn-On Delay Time | td(on) | 7 | 15 | ns | VDS=10V, VGS =4.5V, RG=6Ω, ID =1A | 1 | |
| Turn-Off Delay Time | td(off) | 16 | 60 | ns | VDS=10V, VGS =4.5V, RG=6Ω, ID =1A | 1 | |
| Turn-On Rise Time | Tr | 55 | 80 | ns | VDS=10V, VGS =4.5V, RG=6Ω, ID =1A | 1 | |
| Turn-On Fall Time | Tf | 20 | 25 | ns | VDS=10V, VGS =4.5V, RG=6Ω, ID =1A | 1 | |
| Total Gate Charge | Qg(10) | 5.2 | 10 | nC | VDS=10V, VGS =4.5V, ID =3.6A | 1 | |
| Drain-Source Diode Forward Voltage | VSD | 0.76 | 1.2 | V | VGS=0V,IS=1.0A | 1 | |
| Drain-Source Voltage | VDS | 20 | V | 2 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 2 | ||
| Drain Current Continuous | ID | 3 | A | 2 | |||
| Drain Current Pulsed | ID | 9 | A | 2 | |||
| Total Power Dissipation | PD | 1.25 | W | 2 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Maximum Junction-to-Ambient | θJA | 100 | ℃/W | t≤10s | 2 |
CAD (KiCad official)
- Symbol:
PNMT20V3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pnmt20v3-etched.step/pnmt20v3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pnmt20v3.step/pnmt20v3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shanghai Prisemi Elec datasheet (6 pp, sha256
dd3b2b21a312493f, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).