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PMV65UNEAR

Public Made by Adom

by adom

Nexperia MOSFETs, TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMV65UNEAR

Nexperia · MOSFETs · TO-236AB

PMV65UNEAR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the gate-source voltage VGS is limited to -8 V to 8 V (Table 5).
2 S passive Source terminal of the MOSFET; the source current IS is rated at 0.9 A at Tamb = 25 °C (Table 5).
3 D passive Drain terminal of the MOSFET; the drain-source voltage VDS is rated at 20 V maximum and the drain current ID at 2.8 A at VGS = 4.5 V and Tamb = 25 °C (Table 5).

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 20 V Tj = 25 °C 3
Gate-source voltage VGS -8 8 V Tj = 25 °C; Tamb = 25 °C 3
Drain current ID 2.8 A VGS = 4.5 V; Tamb = 25 °C [1] 3
Drain current ID 1.8 A VGS = 4.5 V; Tamb = 100 °C [1] 3
Peak drain current IDM 11 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Non-repetitive drain-source avalanche energy EDS(AL)S 5.6 mJ Tj(init) = 25 °C; ID = 0.3 A; DUT in avalanche (unclamped) 3
Total power dissipation Ptot 490 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 940 mW Tamb = 25 °C [1] 3
Total power dissipation Ptot 6.25 W Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 0.9 A Tamb = 25 °C [1] 3
Electrostatic discharge voltage VESD 2000 V HBM 3
Thermal resistance from junction to ambient Rth(j-a) 221 254 K/W in free air; [1] 4
Thermal resistance from junction to ambient Rth(j-a) 116 133 K/W in free air; [2] 4
Thermal resistance from junction to solder point Rth(j-sp) 17 20 K/W 4
Drain-source breakdown voltage V(BR)DSS 20 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 0.45 0.7 1 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 20 V; VGS = 0 V 6
Gate leakage current IGSS 10 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 5 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 63 73 mΩ VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 93 108 mΩ VGS = 4.5 V; ID = 2.8 A; Tj = 150 °C 6
Drain-source on-state resistance RDSon 71 83 mΩ VGS = 2.5 V; ID = 2.4 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 83 94 mΩ VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C 6
Total gate charge QG(tot) 3.8 6 nC 6
Source-drain voltage VSD 0.7 1.2 V IS = 0.9 A; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMV65UNEAR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: pmv65unear-etched.step / pmv65unear-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv65unear.step / pmv65unear.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 2d33723e93d2a3eb, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF