component
PMV65UNEAR
Public Made by Adomby adom
Nexperia MOSFETs, TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPMV65UNEAR
Nexperia · MOSFETs · TO-236AB
PMV65UNEAR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage VGS is limited to -8 V to 8 V (Table 5). |
| 2 | S | passive | Source terminal of the MOSFET; the source current IS is rated at 0.9 A at Tamb = 25 °C (Table 5). |
| 3 | D | passive | Drain terminal of the MOSFET; the drain-source voltage VDS is rated at 20 V maximum and the drain current ID at 2.8 A at VGS = 4.5 V and Tamb = 25 °C (Table 5). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TO-236AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 20 | V | Tj = 25 °C | 3 | ||
| Gate-source voltage | VGS | -8 | 8 | V | Tj = 25 °C; Tamb = 25 °C | 3 | |
| Drain current | ID | 2.8 | A | VGS = 4.5 V; Tamb = 25 °C [1] | 3 | ||
| Drain current | ID | 1.8 | A | VGS = 4.5 V; Tamb = 100 °C [1] | 3 | ||
| Peak drain current | IDM | 11 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| Non-repetitive drain-source avalanche energy | EDS(AL)S | 5.6 | mJ | Tj(init) = 25 °C; ID = 0.3 A; DUT in avalanche (unclamped) | 3 | ||
| Total power dissipation | Ptot | 490 | mW | Tamb = 25 °C [2] | 3 | ||
| Total power dissipation | Ptot | 940 | mW | Tamb = 25 °C [1] | 3 | ||
| Total power dissipation | Ptot | 6.25 | W | Tsp = 25 °C | 3 | ||
| Junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Source current | IS | 0.9 | A | Tamb = 25 °C [1] | 3 | ||
| Electrostatic discharge voltage | VESD | 2000 | V | HBM | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 221 | 254 | K/W | in free air; [1] | 4 | |
| Thermal resistance from junction to ambient | Rth(j-a) | 116 | 133 | K/W | in free air; [2] | 4 | |
| Thermal resistance from junction to solder point | Rth(j-sp) | 17 | 20 | K/W | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate-source threshold voltage | VGSth | 0.45 | 0.7 | 1 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | 1 | µA | VDS = 20 V; VGS = 0 V | 6 | ||
| Gate leakage current | IGSS | 10 | µA | VGS = 8 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -10 | µA | VGS = -8 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 5 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -5 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Drain-source on-state resistance | RDSon | 63 | 73 | mΩ | VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 93 | 108 | mΩ | VGS = 4.5 V; ID = 2.8 A; Tj = 150 °C | 6 | |
| Drain-source on-state resistance | RDSon | 71 | 83 | mΩ | VGS = 2.5 V; ID = 2.4 A; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 83 | 94 | mΩ | VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C | 6 | |
| Total gate charge | QG(tot) | 3.8 | 6 | nC | 6 | ||
| Source-drain voltage | VSD | 0.7 | 1.2 | V | IS = 0.9 A; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PMV65UNEAR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236AB (KiCad packages3D, STEP)
- 3D model files:
pmv65unear-etched.step/pmv65unear-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmv65unear.step/pmv65unear.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (15 pp, sha256
2d33723e93d2a3eb, retrieved 2026-10-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).