← Commit history

pmv65unear: specified limits as data (metadata.characteristics, 30 rows from the datasheet)

Ray ·41c127278f ·24d ago ·parent 5f785d2
2 files changed +405−1
README.md+37
@@ -21,6 +21,43 @@ PMV65UNEAR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted f | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS |  |  | 20 | V | Tj = 25 °C | 3 |+| Gate-source voltage | VGS | -8 |  | 8 | V | Tj = 25 °C; Tamb = 25 °C | 3 |+| Drain current | ID |  |  | 2.8 | A | VGS = 4.5 V; Tamb = 25 °C [1] | 3 |+| Drain current | ID |  |  | 1.8 | A | VGS = 4.5 V; Tamb = 100 °C [1] | 3 |+| Peak drain current | IDM |  |  | 11 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |+| Non-repetitive drain-source avalanche energy | EDS(AL)S |  |  | 5.6 | mJ | Tj(init) = 25 °C; ID = 0.3 A; DUT in avalanche (unclamped) | 3 |+| Total power dissipation | Ptot |  |  | 490 | mW | Tamb = 25 °C [2] | 3 |+| Total power dissipation | Ptot |  |  | 940 | mW | Tamb = 25 °C [1] | 3 |+| Total power dissipation | Ptot |  |  | 6.25 | W | Tsp = 25 °C | 3 |+| Junction temperature | Tj | -55 |  | 150 | °C |  | 3 |+| Ambient temperature | Tamb | -55 |  | 150 | °C |  | 3 |+| Storage temperature | Tstg | -65 |  | 150 | °C |  | 3 |+| Source current | IS |  |  | 0.9 | A | Tamb = 25 °C [1] | 3 |+| Electrostatic discharge voltage | VESD |  |  | 2000 | V | HBM | 3 |+| Thermal resistance from junction to ambient | Rth(j-a) |  | 221 | 254 | K/W | in free air; [1] | 4 |+| Thermal resistance from junction to ambient | Rth(j-a) |  | 116 | 133 | K/W | in free air; [2] | 4 |+| Thermal resistance from junction to solder point | Rth(j-sp) |  | 17 | 20 | K/W |  | 4 |+| Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |+| Gate-source threshold voltage | VGSth | 0.45 | 0.7 | 1 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |+| Drain leakage current | IDSS |  |  | 1 | µA | VDS = 20 V; VGS = 0 V | 6 |+| Gate leakage current | IGSS |  |  | 10 | µA | VGS = 8 V; VDS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS |  |  | -10 | µA | VGS = -8 V; VDS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS |  |  | 5 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 |+| Gate leakage current | IGSS |  |  | -5 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon |  | 63 | 73 | mΩ | VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon |  | 93 | 108 | mΩ | VGS = 4.5 V; ID = 2.8 A; Tj = 150 °C | 6 |+| Drain-source on-state resistance | RDSon |  | 71 | 83 | mΩ | VGS = 2.5 V; ID = 2.4 A; Tj = 25 °C | 6 |+| Drain-source on-state resistance | RDSon |  | 83 | 94 | mΩ | VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C | 6 |+| Total gate charge | QG(tot) |  | 3.8 | 6 | nC |  | 6 |+| Source-drain voltage | VSD |  | 0.7 | 1.2 | V | IS = 0.9 A; VGS = 0 V; Tj = 25 °C | 6 |+ ## CAD (KiCad official)  - Symbol: `PMV65UNEAR`
page.json+368−1
@@ -147,6 +147,373 @@       "Package": "TO-236AB",       "Category": "Transistors/Thyristors",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "2d33723e93d2a3eb",+      "rows": [+        {+          "name": "Drain-source voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 20,+          "conditions": "Tj = 25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate-source voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -8,+          "typ": null,+          "max": 8,+          "conditions": "Tj = 25 °C; Tamb = 25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 2.8,+          "conditions": "VGS = 4.5 V; Tamb = 25 °C [1]",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 1.8,+          "conditions": "VGS = 4.5 V; Tamb = 100 °C [1]",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Peak drain current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 11,+          "conditions": "Tamb = 25 °C; single pulse; tp ≤ 10 µs",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Non-repetitive drain-source avalanche energy",+          "symbol": "EDS(AL)S",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 5.6,+          "conditions": "Tj(init) = 25 °C; ID = 0.3 A; DUT in avalanche (unclamped)",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Total power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 490,+          "conditions": "Tamb = 25 °C [2]",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Total power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 940,+          "conditions": "Tamb = 25 °C [1]",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Total power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 6.25,+          "conditions": "Tsp = 25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Junction temperature",+          "symbol": "Tj",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Ambient temperature",+          "symbol": "Tamb",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Storage temperature",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -65,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Source current",+          "symbol": "IS",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 0.9,+          "conditions": "Tamb = 25 °C [1]",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Electrostatic discharge voltage",+          "symbol": "VESD",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 2000,+          "conditions": "HBM",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance from junction to ambient",+          "symbol": "Rth(j-a)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": 221,+          "max": 254,+          "conditions": "in free air; [1]",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance from junction to ambient",+          "symbol": "Rth(j-a)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": 116,+          "max": 133,+          "conditions": "in free air; [2]",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance from junction to solder point",+          "symbol": "Rth(j-sp)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": 17,+          "max": 20,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Drain-source breakdown voltage",+          "symbol": "V(BR)DSS",+          "kind": "electrical",+          "unit": "V",+          "min": 20,+          "typ": null,+          "max": null,+          "conditions": "ID = 250 µA; VGS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Gate-source threshold voltage",+          "symbol": "VGSth",+          "kind": "electrical",+          "unit": "V",+          "min": 0.45,+          "typ": 0.7,+          "max": 1,+          "conditions": "ID = 250 µA; VDS = VGS; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Drain leakage current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VDS = 20 V; VGS = 0 V",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Gate leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "VGS = 8 V; VDS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Gate leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": -10,+          "conditions": "VGS = -8 V; VDS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Gate leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 5,+          "conditions": "VGS = 4.5 V; VDS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Gate leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": -5,+          "conditions": "VGS = -4.5 V; VDS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDSon",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 63,+          "max": 73,+          "conditions": "VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDSon",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 93,+          "max": 108,+          "conditions": "VGS = 4.5 V; ID = 2.8 A; Tj = 150 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDSon",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 71,+          "max": 83,+          "conditions": "VGS = 2.5 V; ID = 2.4 A; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDSon",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 83,+          "max": 94,+          "conditions": "VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Total gate charge",+          "symbol": "QG(tot)",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 3.8,+          "max": 6,+          "conditions": "",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "Source-drain voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 0.7,+          "max": 1.2,+          "conditions": "IS = 0.9 A; VGS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -189,4 +556,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}