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Ray pmv60enear: specified limits as data (metadata.characteristics, 29 rows from the datasheet) 299126b 17d ago

PMV60ENEAR

Nexperia · MOSFETs · SOT-23

PMV60ENEAR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel enhancement-mode MOSFET; the datasheet limits gate-source voltage VGS to -20 V to 20 V (Table 5).
2 S passive Source of the N-channel MOSFET; the datasheet gives a source current limit of 1.3 A at Tamb = 25 °C (Table 5).
3 D passive Drain of the N-channel MOSFET; the datasheet gives a drain-source voltage limit of 40 V and a continuous drain current of 3 A at Tamb = 25 °C with VGS = 10 V (Table 5).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
drain-source voltage VDS 40 V 3
gate-source voltage VGS -20 20 V Tj = 25 °C 3
drain current ID 3 A VGS = 10 V; Tamb = 25 °C [1] 3
drain current ID 2.1 A VGS = 10 V; Tamb = 100 °C [1] 3
peak drain current IDM 12 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
total power dissipation Ptot 615 mW Tamb = 25 °C [2] 3
total power dissipation Ptot 1.25 W [1] 3
total power dissipation Ptot 7.5 W Tsp = 25 °C 3
junction temperature Tj -55 175 °C 3
ambient temperature Tamb -55 175 °C 3
storage temperature Tstg -65 175 °C 3
source current IS 1.3 A Tamb = 25 °C [1] 3
electrostatic discharge voltage VESD 1500 V HBM [3]; measured between all pins 3
non-repetitive drain-source avalanche energy EDS(AL)S 8.5 mJ Tj(init) = 25 °C; ID = 0.42 A; DUT in avalanche (unclamped) 3
thermal resistance from junction to ambient Rth(j-a) 212 244 K/W in free air; [1] FR4 PCB, single-sided copper, standard footprint 5
thermal resistance from junction to ambient Rth(j-a) 104 119 K/W in free air; [2] FR4 PCB, mounting pad for drain 6 cm2 5
thermal resistance from junction to solder point Rth(j-sp) 17 20 K/W 5
drain-source breakdown voltage V(BR)DSS 40 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
gate-source threshold voltage VGSth 1 1.6 2.5 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
drain leakage current IDSS 1 µA VDS = 40 V; VGS = 0 V; Tj = 25 °C 6
gate leakage current IGSS 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS 2 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS -2 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C 6
drain-source on-state resistance RDSon 60 75 mΩ VGS = 10 V; ID = 3 A; Tj = 25 °C 6
drain-source on-state resistance RDSon 114 143 mΩ VGS = 10 V; ID = 3 A; Tj = 175 °C 6
drain-source on-state resistance RDSon 75 99 mΩ VGS = 4.5 V; ID = 2.6 A; Tj = 25 °C 6
total gate charge QG(tot) 3.6 5 nC 6
source-drain voltage VSD 0.8 1.2 V IS = 1.3 A; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMV60ENEAR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmv60enear-etched.step / pmv60enear-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv60enear.step / pmv60enear.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 b295706e79b65e1b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF