component
PMV60ENEAR
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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pmv60enear: specified limits as data (metadata.characteristics, 29 rows from the datasheet)
2 files changed
+392−1
README.md+36@@ -21,6 +21,42 @@ PMV60ENEAR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| drain-source voltage | VDS | | | 40 | V | | 3 |+| gate-source voltage | VGS | -20 | | 20 | V | Tj = 25 °C | 3 |+| drain current | ID | | | 3 | A | VGS = 10 V; Tamb = 25 °C [1] | 3 |+| drain current | ID | | | 2.1 | A | VGS = 10 V; Tamb = 100 °C [1] | 3 |+| peak drain current | IDM | | | 12 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |+| total power dissipation | Ptot | | | 615 | mW | Tamb = 25 °C [2] | 3 |+| total power dissipation | Ptot | | | 1.25 | W | [1] | 3 |+| total power dissipation | Ptot | | | 7.5 | W | Tsp = 25 °C | 3 |+| junction temperature | Tj | -55 | | 175 | °C | | 3 |+| ambient temperature | Tamb | -55 | | 175 | °C | | 3 |+| storage temperature | Tstg | -65 | | 175 | °C | | 3 |+| source current | IS | | | 1.3 | A | Tamb = 25 °C [1] | 3 |+| electrostatic discharge voltage | VESD | | | 1500 | V | HBM [3]; measured between all pins | 3 |+| non-repetitive drain-source avalanche energy | EDS(AL)S | | | 8.5 | mJ | Tj(init) = 25 °C; ID = 0.42 A; DUT in avalanche (unclamped) | 3 |+| thermal resistance from junction to ambient | Rth(j-a) | | 212 | 244 | K/W | in free air; [1] FR4 PCB, single-sided copper, standard footprint | 5 |+| thermal resistance from junction to ambient | Rth(j-a) | | 104 | 119 | K/W | in free air; [2] FR4 PCB, mounting pad for drain 6 cm2 | 5 |+| thermal resistance from junction to solder point | Rth(j-sp) | | 17 | 20 | K/W | | 5 |+| drain-source breakdown voltage | V(BR)DSS | 40 | | | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |+| gate-source threshold voltage | VGSth | 1 | 1.6 | 2.5 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |+| drain leakage current | IDSS | | | 1 | µA | VDS = 40 V; VGS = 0 V; Tj = 25 °C | 6 |+| gate leakage current | IGSS | | | 10 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 |+| gate leakage current | IGSS | | | -10 | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 |+| gate leakage current | IGSS | | | 2 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 |+| gate leakage current | IGSS | | | -2 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 |+| drain-source on-state resistance | RDSon | | 60 | 75 | mΩ | VGS = 10 V; ID = 3 A; Tj = 25 °C | 6 |+| drain-source on-state resistance | RDSon | | 114 | 143 | mΩ | VGS = 10 V; ID = 3 A; Tj = 175 °C | 6 |+| drain-source on-state resistance | RDSon | | 75 | 99 | mΩ | VGS = 4.5 V; ID = 2.6 A; Tj = 25 °C | 6 |+| total gate charge | QG(tot) | | 3.6 | 5 | nC | | 6 |+| source-drain voltage | VSD | | 0.8 | 1.2 | V | IS = 1.3 A; VGS = 0 V; Tj = 25 °C | 6 |+ ## CAD (KiCad official) - Symbol: `PMV60ENEAR`
page.json+356−1@@ -149,6 +149,361 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "b295706e79b65e1b",+ "rows": [+ {+ "name": "drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "VGS = 10 V; Tamb = 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.1,+ "conditions": "VGS = 10 V; Tamb = 100 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "peak drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "Tamb = 25 °C; single pulse; tp ≤ 10 µs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 615,+ "conditions": "Tamb = 25 °C [2]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "[1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 7.5,+ "conditions": "Tsp = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "ambient temperature",+ "symbol": "Tamb",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "source current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "Tamb = 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "electrostatic discharge voltage",+ "symbol": "VESD",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1500,+ "conditions": "HBM [3]; measured between all pins",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "non-repetitive drain-source avalanche energy",+ "symbol": "EDS(AL)S",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 8.5,+ "conditions": "Tj(init) = 25 °C; ID = 0.42 A; DUT in avalanche (unclamped)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 212,+ "max": 244,+ "conditions": "in free air; [1] FR4 PCB, single-sided copper, standard footprint",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 104,+ "max": 119,+ "conditions": "in free air; [2] FR4 PCB, mounting pad for drain 6 cm2",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to solder point",+ "symbol": "Rth(j-sp)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 17,+ "max": 20,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "ID = 250 µA; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "gate-source threshold voltage",+ "symbol": "VGSth",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.6,+ "max": 2.5,+ "conditions": "ID = 250 µA; VDS = VGS; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "drain leakage current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 40 V; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VGS = 20 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VGS = -20 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "VGS = 10 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -2,+ "conditions": "VGS = -10 V; VDS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 60,+ "max": 75,+ "conditions": "VGS = 10 V; ID = 3 A; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 114,+ "max": 143,+ "conditions": "VGS = 10 V; ID = 3 A; Tj = 175 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "drain-source on-state resistance",+ "symbol": "RDSon",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 75,+ "max": 99,+ "conditions": "VGS = 4.5 V; ID = 2.6 A; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "total gate charge",+ "symbol": "QG(tot)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.6,+ "max": 5,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "source-drain voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "IS = 1.3 A; VGS = 0 V; Tj = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +545,4 @@ "visibility": { "public": true }-}+}