# PMN40XPEAX

**Nexperia** · MOSFETs · TSOP-6

PMN40XPEAX from Nexperia, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V maximum and a drain current ID of -4.7 A maximum at Tamb = 25 °C. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V maximum and a drain current ID of -4.7 A maximum at Tamb = 25 °C. |
| 3 | G | input | Gate terminal of the MOSFET, with a gate-source voltage VGS limited to -12 V to 12 V. |
| 4 | S | passive | Source terminal of the MOSFET, with a source current IS limited to -1.7 A at Tamb = 25 °C. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V maximum and a drain current ID of -4.7 A maximum at Tamb = 25 °C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V maximum and a drain current ID of -4.7 A maximum at Tamb = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | -20 | V |  | 3 |
| Gate-source voltage | VGS | -12 |  | 12 | V | Tj = 25 °C | 3 |
| Drain current | ID |  |  | -4.7 | A | VGS = -4.5 V; Tamb = 25 °C [1] | 3 |
| Drain current | ID |  |  | -3 | A | VGS = -4.5 V; Tamb = 100 °C [1] | 3 |
| Peak drain current | IDM |  |  | -19 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| Total power dissipation | Ptot |  |  | 660 | mW | Tamb = 25 °C [2] | 3 |
| Total power dissipation | Ptot |  |  | 1.7 | W | Tamb = 25 °C [1] | 3 |
| Total power dissipation | Ptot |  |  | 7.5 | W | Tsp = 25 °C | 3 |
| Junction temperature | Tj | -55 |  | 175 | °C |  | 3 |
| Ambient temperature | Tamb | -55 |  | 175 | °C |  | 3 |
| Storage temperature | Tstg | -65 |  | 175 | °C |  | 3 |
| Source current | IS |  |  | -1.7 | A | Tamb = 25 °C [1] | 3 |
| Electrostatic discharge voltage | VESD |  |  | 1000 | V | HBM [3] | 3 |
| Non-repetitive drain-source avalanche energy | EDS(AL)S |  |  | 15 | mJ | Tj(init) = 25 °C; ID = -1.5 A; DUT in avalanche (unclamped) | 3 |
| Thermal resistance junction to ambient (free air) | Rth(j-a) |  | 195 | 225 | K/W | [1] standard footprint | 5 |
| Thermal resistance junction to ambient (mounting pad for drain 6 cm2) | Rth(j-a) |  | 78 | 90 | K/W | [2] mounting pad for drain 6 cm2 | 5 |
| Thermal resistance junction to solder point | Rth(j-sp) |  | 15 | 20 | K/W |  | 5 |
| Drain-source breakdown voltage | V(BR)DSS | -20 |  |  | V | ID = -250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| Gate-source threshold voltage | VGSth | -0.6 | -0.95 | -1.3 | V | ID = -250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS |  |  | -1 | µA | VDS = -20 V; VGS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | -10 | µA | VGS = -12 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | 10 | µA | VGS = 12 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | -2 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS |  |  | 2 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 39 | 46 | mΩ | VGS = -8 V; ID = -4.7 A; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 59 | 70 | mΩ | VGS = -8 V; ID = -4.7 A; Tj = 175 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 43 | 50 | mΩ | VGS = -4.5 V; ID = -4.7 A; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon |  | 64 | 78 | mΩ | VGS = -2.5 V; ID = -2 A; Tj = 25 °C | 6 |
| Total gate charge | QG(tot) |  | 10.6 | 16 | nC | VDS = -10 V; ID = -5.8 A; VGS = -4.5 V; Tj = 25 °C | 6 |
| Source-drain voltage | VSD |  | -0.8 | -1.2 | V | IS = -1.7 A; VGS = 0 V; Tj = 25 °C | 6 |

## CAD (KiCad official)

- Symbol: `PMN40XPEAX`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `pmn40xpeax-etched.step` / `pmn40xpeax-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pmn40xpeax.step` / `pmn40xpeax.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PMN40XPEAX.pdf) (15 pp, sha256 `4ce978faac96d44e`, retrieved 2026-10-29, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pmn40xpeax-datasheet.pdf)