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PMN40XPEAX

Public Made by Adom

by adom

Nexperia MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMN40XPEAX

Nexperia · MOSFETs · TSOP-6

PMN40XPEAX from Nexperia, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V maximum and a drain current ID of -4.7 A maximum at Tamb = 25 °C.
2 D passive Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V maximum and a drain current ID of -4.7 A maximum at Tamb = 25 °C.
3 G input Gate terminal of the MOSFET, with a gate-source voltage VGS limited to -12 V to 12 V.
4 S passive Source terminal of the MOSFET, with a source current IS limited to -1.7 A at Tamb = 25 °C.
5 D passive Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V maximum and a drain current ID of -4.7 A maximum at Tamb = 25 °C.
6 D passive Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V maximum and a drain current ID of -4.7 A maximum at Tamb = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -20 V 3
Gate-source voltage VGS -12 12 V Tj = 25 °C 3
Drain current ID -4.7 A VGS = -4.5 V; Tamb = 25 °C [1] 3
Drain current ID -3 A VGS = -4.5 V; Tamb = 100 °C [1] 3
Peak drain current IDM -19 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 660 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 1.7 W Tamb = 25 °C [1] 3
Total power dissipation Ptot 7.5 W Tsp = 25 °C 3
Junction temperature Tj -55 175 °C 3
Ambient temperature Tamb -55 175 °C 3
Storage temperature Tstg -65 175 °C 3
Source current IS -1.7 A Tamb = 25 °C [1] 3
Electrostatic discharge voltage VESD 1000 V HBM [3] 3
Non-repetitive drain-source avalanche energy EDS(AL)S 15 mJ Tj(init) = 25 °C; ID = -1.5 A; DUT in avalanche (unclamped) 3
Thermal resistance junction to ambient (free air) Rth(j-a) 195 225 K/W [1] standard footprint 5
Thermal resistance junction to ambient (mounting pad for drain 6 cm2) Rth(j-a) 78 90 K/W [2] mounting pad for drain 6 cm2 5
Thermal resistance junction to solder point Rth(j-sp) 15 20 K/W 5
Drain-source breakdown voltage V(BR)DSS -20 V ID = -250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth -0.6 -0.95 -1.3 V ID = -250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS -1 µA VDS = -20 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 10 µA VGS = 12 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -2 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 2 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 39 46 mΩ VGS = -8 V; ID = -4.7 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 59 70 mΩ VGS = -8 V; ID = -4.7 A; Tj = 175 °C 6
Drain-source on-state resistance RDSon 43 50 mΩ VGS = -4.5 V; ID = -4.7 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 64 78 mΩ VGS = -2.5 V; ID = -2 A; Tj = 25 °C 6
Total gate charge QG(tot) 10.6 16 nC VDS = -10 V; ID = -5.8 A; VGS = -4.5 V; Tj = 25 °C 6
Source-drain voltage VSD -0.8 -1.2 V IS = -1.7 A; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMN40XPEAX
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: pmn40xpeax-etched.step / pmn40xpeax-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmn40xpeax.step / pmn40xpeax.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 4ce978faac96d44e, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF