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PMEG150G20ELPX
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Nexperia Diodes - General Purpose, SOD-128. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PMEG150G20ELPX
Nexperia · Diodes - General Purpose · SOD-128
PMEG150G20ELPX from Nexperia, in a SOD-128. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the SiGe rectifier; the cathode tab is the solder point for Rth(j-sp) = 12 K/W max, and VR is limited to 150 V. |
| 2 | A | passive | Anode of the SiGe rectifier, rated for IF(AV) of 2 A and IFSM of 75 A (tp = 8.3 ms half sine wave). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-128 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse voltage | VR | 150 | V | Tj = 25 °C | 2 | ||
| Forward current | IF | 2.8 | A | δ = 1; Tsp ≤ 155 °C | 2 | ||
| Average forward current | IF(AV) | 2 | A | δ = 0.5; square wave; f = 20 kHz; Tsp ≤ 160 °C | 2 | ||
| Non-repetitive peak forward current | IFSM | 75 | A | tp = 8.3 ms; half sine wave; Tj(init) = 25 °C | 2 | ||
| Total power dissipation (standard footprint) | Ptot | 0.75 | W | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint | 2 | ||
| Total power dissipation (1 cm2 cathode pad) | Ptot | 1.2 | W | Tamb ≤ 25 °C; FR4 PCB, mounting pad for cathode 1 cm2 | 2 | ||
| Junction temperature | Tj | 175 | °C | 2 | |||
| Ambient temperature | Tamb | -55 | 175 | °C | 2 | ||
| Storage temperature | Tstg | -65 | 175 | °C | 2 | ||
| Thermal resistance junction to ambient (standard footprint) | Rth(j-a) | 200 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 | ||
| Thermal resistance junction to ambient (1 cm2 cathode pad) | Rth(j-a) | 120 | K/W | in free air; FR4 PCB, mounting pad for cathode 1 cm2 | 3 | ||
| Thermal resistance junction to solder point | Rth(j-sp) | 12 | K/W | Soldering point of cathode tab | 3 | ||
| Reverse breakdown voltage | V(BR)R | 150 | V | IR = 1 mA; pulsed; Tj = 25 °C | 4 | ||
| Forward voltage | VF | 600 | 680 | mV | IF = 0.1 A; Tj = 25 °C; pulsed | 4 | |
| Forward voltage | VF | 690 | 770 | mV | IF = 0.5 A; Tj = 25 °C; pulsed | 4 | |
| Forward voltage | VF | 730 | 800 | mV | IF = 1 A; Tj = 25 °C; pulsed | 4 | |
| Forward voltage | VF | 780 | 850 | mV | IF = 2 A; Tj = 25 °C; pulsed | 4 | |
| Forward voltage | VF | 870 | 960 | mV | IF = 2 A; Tj = -40 °C; pulsed | 4 | |
| Forward voltage | VF | 640 | 740 | mV | IF = 2 A; Tj = 125 °C; pulsed | 4 | |
| Reverse current | IR | 0.4 | 30 | nA | VR = 150 V; Tj = 25 °C; pulsed | 4 | |
| Reverse current | IR | 5 | 50 | µA | VR = 150 V; Tj = 125 °C; pulsed | 4 | |
| Reverse current | IR | 30 | 300 | µA | VR = 150 V; Tj = 150 °C; pulsed | 4 | |
| Diode capacitance | Cd | 70 | pF | VR = 1 V; f = 1 MHz; Tj = 25 °C | 4 | ||
| Diode capacitance | Cd | 28 | pF | VR = 10 V; f = 1 MHz; Tj = 25 °C | 4 | ||
| Reverse recovery time, step recovery | trr | 8 | ns | IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; Tj = 25 °C | 4 | ||
| Reverse recovery time, ramp recovery | trr | 14 | ns | dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; Tj = 25 °C | 4 | ||
| Peak reverse recovery current | IRM | 0.7 | A | dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; Tj = 25 °C | 4 | ||
| Reverse recovery charge | Qrr | 7 | nC | dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; Tj = 25 °C | 4 | ||
| Peak forward recovery voltage | VFRM | 715 | mV | IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C | 4 |
CAD (KiCad official)
- Symbol:
PMEG150G20ELPX - Footprint:
Diode_SMD:D_SOD-128 - 3D model: SOD-128 (KiCad packages3D, STEP)
- 3D model files:
pmeg150g20elpx-etched.step/pmeg150g20elpx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmeg150g20elpx.step/pmeg150g20elpx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (14 pp, sha256
5a3054ee35609313, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PMEG150G20ELPX
**Nexperia** · Diodes - General Purpose · SOD-128
PMEG150G20ELPX from Nexperia, in a SOD-128. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the SiGe rectifier; the cathode tab is the solder point for Rth(j-sp) = 12 K/W max, and VR is limited to 150 V. |
| 2 | A | passive | Anode of the SiGe rectifier, rated for IF(AV) of 2 A and IFSM of 75 A (tp = 8.3 ms half sine wave). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-128 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse voltage | VR | | | 150 | V | Tj = 25 °C | 2 |
| Forward current | IF | | | 2.8 | A | δ = 1; Tsp ≤ 155 °C | 2 |
| Average forward current | IF(AV) | | | 2 | A | δ = 0.5; square wave; f = 20 kHz; Tsp ≤ 160 °C | 2 |
| Non-repetitive peak forward current | IFSM | | | 75 | A | tp = 8.3 ms; half sine wave; Tj(init) = 25 °C | 2 |
| Total power dissipation (standard footprint) | Ptot | | | 0.75 | W | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint | 2 |
| Total power dissipation (1 cm2 cathode pad) | Ptot | | | 1.2 | W | Tamb ≤ 25 °C; FR4 PCB, mounting pad for cathode 1 cm2 | 2 |
| Junction temperature | Tj | | | 175 | °C | | 2 |
| Ambient temperature | Tamb | -55 | | 175 | °C | | 2 |
| Storage temperature | Tstg | -65 | | 175 | °C | | 2 |
| Thermal resistance junction to ambient (standard footprint) | Rth(j-a) | | | 200 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 |
| Thermal resistance junction to ambient (1 cm2 cathode pad) | Rth(j-a) | | | 120 | K/W | in free air; FR4 PCB, mounting pad for cathode 1 cm2 | 3 |
| Thermal resistance junction to solder point | Rth(j-sp) | | | 12 | K/W | Soldering point of cathode tab | 3 |
| Reverse breakdown voltage | V(BR)R | 150 | | | V | IR = 1 mA; pulsed; Tj = 25 °C | 4 |
| Forward voltage | VF | | 600 | 680 | mV | IF = 0.1 A; Tj = 25 °C; pulsed | 4 |
| Forward voltage | VF | | 690 | 770 | mV | IF = 0.5 A; Tj = 25 °C; pulsed | 4 |
| Forward voltage | VF | | 730 | 800 | mV | IF = 1 A; Tj = 25 °C; pulsed | 4 |
| Forward voltage | VF | | 780 | 850 | mV | IF = 2 A; Tj = 25 °C; pulsed | 4 |
| Forward voltage | VF | | 870 | 960 | mV | IF = 2 A; Tj = -40 °C; pulsed | 4 |
| Forward voltage | VF | | 640 | 740 | mV | IF = 2 A; Tj = 125 °C; pulsed | 4 |
| Reverse current | IR | | 0.4 | 30 | nA | VR = 150 V; Tj = 25 °C; pulsed | 4 |
| Reverse current | IR | | 5 | 50 | µA | VR = 150 V; Tj = 125 °C; pulsed | 4 |
| Reverse current | IR | | 30 | 300 | µA | VR = 150 V; Tj = 150 °C; pulsed | 4 |
| Diode capacitance | Cd | | 70 | | pF | VR = 1 V; f = 1 MHz; Tj = 25 °C | 4 |
| Diode capacitance | Cd | | 28 | | pF | VR = 10 V; f = 1 MHz; Tj = 25 °C | 4 |
| Reverse recovery time, step recovery | trr | | 8 | | ns | IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; Tj = 25 °C | 4 |
| Reverse recovery time, ramp recovery | trr | | 14 | | ns | dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; Tj = 25 °C | 4 |
| Peak reverse recovery current | IRM | | 0.7 | | A | dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; Tj = 25 °C | 4 |
| Reverse recovery charge | Qrr | | 7 | | nC | dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; Tj = 25 °C | 4 |
| Peak forward recovery voltage | VFRM | | 715 | | mV | IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C | 4 |
## CAD (KiCad official)
- Symbol: `PMEG150G20ELPX`
- Footprint: `Diode_SMD:D_SOD-128`
- 3D model: SOD-128 (KiCad packages3D, STEP)
- 3D model files: `pmeg150g20elpx-etched.step` / `pmeg150g20elpx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pmeg150g20elpx.step` / `pmeg150g20elpx.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PMEG150G20ELPX.pdf) (14 pp, sha256 `5a3054ee35609313`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pmeg150g20elpx-datasheet.pdf)