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Contents

README

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PMEG150G20ELPX

Nexperia · Diodes - General Purpose · SOD-128

PMEG150G20ELPX from Nexperia, in a SOD-128. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SiGe rectifier; the cathode tab is the solder point for Rth(j-sp) = 12 K/W max, and VR is limited to 150 V.
2 A passive Anode of the SiGe rectifier, rated for IF(AV) of 2 A and IFSM of 75 A (tp = 8.3 ms half sine wave).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-128
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage VR 150 V Tj = 25 °C 2
Forward current IF 2.8 A δ = 1; Tsp ≤ 155 °C 2
Average forward current IF(AV) 2 A δ = 0.5; square wave; f = 20 kHz; Tsp ≤ 160 °C 2
Non-repetitive peak forward current IFSM 75 A tp = 8.3 ms; half sine wave; Tj(init) = 25 °C 2
Total power dissipation (standard footprint) Ptot 0.75 W Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint 2
Total power dissipation (1 cm2 cathode pad) Ptot 1.2 W Tamb ≤ 25 °C; FR4 PCB, mounting pad for cathode 1 cm2 2
Junction temperature Tj 175 °C 2
Ambient temperature Tamb -55 175 °C 2
Storage temperature Tstg -65 175 °C 2
Thermal resistance junction to ambient (standard footprint) Rth(j-a) 200 K/W in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint 3
Thermal resistance junction to ambient (1 cm2 cathode pad) Rth(j-a) 120 K/W in free air; FR4 PCB, mounting pad for cathode 1 cm2 3
Thermal resistance junction to solder point Rth(j-sp) 12 K/W Soldering point of cathode tab 3
Reverse breakdown voltage V(BR)R 150 V IR = 1 mA; pulsed; Tj = 25 °C 4
Forward voltage VF 600 680 mV IF = 0.1 A; Tj = 25 °C; pulsed 4
Forward voltage VF 690 770 mV IF = 0.5 A; Tj = 25 °C; pulsed 4
Forward voltage VF 730 800 mV IF = 1 A; Tj = 25 °C; pulsed 4
Forward voltage VF 780 850 mV IF = 2 A; Tj = 25 °C; pulsed 4
Forward voltage VF 870 960 mV IF = 2 A; Tj = -40 °C; pulsed 4
Forward voltage VF 640 740 mV IF = 2 A; Tj = 125 °C; pulsed 4
Reverse current IR 0.4 30 nA VR = 150 V; Tj = 25 °C; pulsed 4
Reverse current IR 5 50 µA VR = 150 V; Tj = 125 °C; pulsed 4
Reverse current IR 30 300 µA VR = 150 V; Tj = 150 °C; pulsed 4
Diode capacitance Cd 70 pF VR = 1 V; f = 1 MHz; Tj = 25 °C 4
Diode capacitance Cd 28 pF VR = 10 V; f = 1 MHz; Tj = 25 °C 4
Reverse recovery time, step recovery trr 8 ns IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; Tj = 25 °C 4
Reverse recovery time, ramp recovery trr 14 ns dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; Tj = 25 °C 4
Peak reverse recovery current IRM 0.7 A dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; Tj = 25 °C 4
Reverse recovery charge Qrr 7 nC dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; Tj = 25 °C 4
Peak forward recovery voltage VFRM 715 mV IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C 4

CAD (KiCad official)

  • Symbol: PMEG150G20ELPX
  • Footprint: Diode_SMD:D_SOD-128
  • 3D model: SOD-128 (KiCad packages3D, STEP)
  • 3D model files: pmeg150g20elpx-etched.step / pmeg150g20elpx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmeg150g20elpx.step / pmeg150g20elpx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (14 pp, sha256 5a3054ee35609313, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF