component
PJM2301PSA
Public Made by Adomby adom
PJSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
pjm2301psa: specified limits as data (metadata.characteristics, 18 rows from the datasheet)
dc13f40
16d ago
PJM2301PSA
PJSEMI · MOSFETs · SOT-23
PJM2301PSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal of the P-channel enhancement MOSFET, with gate-source voltage rated ±12 V (absolute maximum). |
| 2 | Source | passive | Source terminal of the MOSFET; the datasheet gives no pin-specific limit, with the device drain-source voltage rated -20 V. |
| 3 | Drain | passive | Drain terminal of the MOSFET, with drain-source voltage rated -20 V and continuous drain current -2.8 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | -VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | -ID | 2.8 | A | 1 | |||
| Pulsed Drain Current | -IDM | 10 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | PD | 1.25 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | 100 | °C/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 90 | 110 | mΩ | VGS = - 4.5 V, ID = - 2.8 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 110 | 140 | mΩ | VGS = - 2.5 V, ID = - 2 A | 2 | |
| Total Gate Charge | Qg | 5.5 | 10 | nC | VDS = -10V, VGS= -4.5V, ID= -2.8A | 2 | |
| Total Gate Charge | Qg | 3.3 | 6 | nC | VDS = - 10 V, VGS = - 2.5 V, ID = - 2.8 A | 2 | |
| Rise Time | tr | 35 | 60 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 30 | 50 | ns | 2 | ||
| Fall Time | tf | 10 | 20 | ns | 2 | ||
| Body Diode Voltage | -VSD | 0.5 | 1.2 | V | IS = - 1 A | 2 | |
| Gate-Source Threshold Voltage | -VGS(th) | 0.4 | 1 | V | VDS = VGS, ID = - 250 µA | 2 |
CAD (KiCad official)
- Symbol:
PJM2301PSA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pjm2301psa-etched.step/pjm2301psa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm2301psa.step/pjm2301psa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (8 pp, sha256
75a8f356d1f65c1b, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PJM2301PSA
**PJSEMI** · MOSFETs · SOT-23
PJM2301PSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal of the P-channel enhancement MOSFET, with gate-source voltage rated ±12 V (absolute maximum). |
| 2 | Source | passive | Source terminal of the MOSFET; the datasheet gives no pin-specific limit, with the device drain-source voltage rated -20 V. |
| 3 | Drain | passive | Drain terminal of the MOSFET, with drain-source voltage rated -20 V and continuous drain current -2.8 A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | -VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | -ID | | | 2.8 | A | | 1 |
| Pulsed Drain Current | -IDM | | | 10 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Power Dissipation | PD | | | 1.25 | W | | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | | 100 | | °C/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 90 | 110 | mΩ | VGS = - 4.5 V, ID = - 2.8 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 110 | 140 | mΩ | VGS = - 2.5 V, ID = - 2 A | 2 |
| Total Gate Charge | Qg | | 5.5 | 10 | nC | VDS = -10V, VGS= -4.5V, ID= -2.8A | 2 |
| Total Gate Charge | Qg | | 3.3 | 6 | nC | VDS = - 10 V, VGS = - 2.5 V, ID = - 2.8 A | 2 |
| Rise Time | tr | | 35 | 60 | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 30 | 50 | ns | | 2 |
| Fall Time | tf | | 10 | 20 | ns | | 2 |
| Body Diode Voltage | -VSD | | 0.5 | 1.2 | V | IS = - 1 A | 2 |
| Gate-Source Threshold Voltage | -VGS(th) | 0.4 | | 1 | V | VDS = VGS, ID = - 250 µA | 2 |
## CAD (KiCad official)
- Symbol: `PJM2301PSA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pjm2301psa-etched.step` / `pjm2301psa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pjm2301psa.step` / `pjm2301psa.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [PJSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884474365161472) (8 pp, sha256 `75a8f356d1f65c1b`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pjm2301psa-datasheet.pdf)