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pjm2301psa: specified limits as data (metadata.characteristics, 18 rows from the datasheet)

Ray ·dc13f4000a ·16d ago ·parent 7818211
2 files changed +249−1
README.md+25
@@ -21,6 +21,31 @@ PJM2301PSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | -VDS |  |  | 20 | V |  | 1 |+| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |+| Continuous Drain Current | -ID |  |  | 2.8 | A |  | 1 |+| Pulsed Drain Current | -IDM |  |  | 10 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |+| Power Dissipation | PD |  |  | 1.25 | W |  | 1 |+| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |+| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |+| Maximum Junction-to-Ambient Thermal Resistance | RθJA |  | 100 |  | °C/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |+| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 |+| Drain-Source On-State Resistance | RDS(on) |  | 90 | 110 | mΩ | VGS = - 4.5 V, ID = - 2.8 A | 2 |+| Drain-Source On-State Resistance | RDS(on) |  | 110 | 140 | mΩ | VGS = - 2.5 V, ID = - 2 A | 2 |+| Total Gate Charge | Qg |  | 5.5 | 10 | nC | VDS = -10V, VGS= -4.5V, ID= -2.8A | 2 |+| Total Gate Charge | Qg |  | 3.3 | 6 | nC | VDS = - 10 V, VGS = - 2.5 V, ID = - 2.8 A | 2 |+| Rise Time | tr |  | 35 | 60 | ns |  | 2 |+| Turn-Off Delay Time | td(off) |  | 30 | 50 | ns |  | 2 |+| Fall Time | tf |  | 10 | 20 | ns |  | 2 |+| Body Diode Voltage | -VSD |  | 0.5 | 1.2 | V | IS = - 1 A | 2 |+| Gate-Source Threshold Voltage | -VGS(th) | 0.4 |  | 1 | V | VDS = VGS, ID = - 250 µA | 2 |+ ## CAD (KiCad official)  - Symbol: `PJM2301PSA`
page.json+224−1
@@ -147,6 +147,229 @@       "Package": "SOT-23",       "Category": "Transistors/Thyristors",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "75a8f356d1f65c1b",+      "rows": [+        {+          "name": "Drain-Source Voltage",+          "symbol": "-VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -12,+          "typ": null,+          "max": 12,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current",+          "symbol": "-ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 2.8,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current",+          "symbol": "-IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "Note 1: repetitive rating, pulse width limited by maximum junction temperature",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 1.25,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction Temperature",+          "symbol": "TJ",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": null,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Storage Temperature Range",+          "symbol": "TSTG",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Junction-to-Ambient Thermal Resistance",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": 100,+          "max": null,+          "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Leakage",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VDS = 0 V, VGS = ± 8 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 90,+          "max": 110,+          "conditions": "VGS = - 4.5 V, ID = - 2.8 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 110,+          "max": 140,+          "conditions": "VGS = - 2.5 V, ID = - 2 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total Gate Charge",+          "symbol": "Qg",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 5.5,+          "max": 10,+          "conditions": "VDS = -10V, VGS= -4.5V, ID= -2.8A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total Gate Charge",+          "symbol": "Qg",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 3.3,+          "max": 6,+          "conditions": "VDS = - 10 V, VGS = - 2.5 V, ID = - 2.8 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Rise Time",+          "symbol": "tr",+          "kind": "timing",+          "unit": "ns",+          "min": null,+          "typ": 35,+          "max": 60,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Turn-Off Delay Time",+          "symbol": "td(off)",+          "kind": "timing",+          "unit": "ns",+          "min": null,+          "typ": 30,+          "max": 50,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Fall Time",+          "symbol": "tf",+          "kind": "timing",+          "unit": "ns",+          "min": null,+          "typ": 10,+          "max": 20,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Body Diode Voltage",+          "symbol": "-VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 0.5,+          "max": 1.2,+          "conditions": "IS = - 1 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Threshold Voltage",+          "symbol": "-VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 0.4,+          "typ": null,+          "max": 1,+          "conditions": "VDS = VGS, ID = - 250 µA",+          "source_page": 2,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -188,4 +411,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}