component
PJM20N60TE
Public Made by Adomby adom
PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| pjm20n60te-etched.glb | 7d ago |
| pjm20n60te-etched.step | 7d ago |
| pjm20n60te-hero.glb | 7d ago |
| pjm20n60te-hero.overlay.json | 7d ago |
| pjm20n60te.glb | 7d ago |
| pjm20n60te.kicad_mod | 7d ago |
| pjm20n60te.kicad_sym | 7d ago |
| pjm20n60te.lbr | 7d ago |
| pjm20n60te.step | 7d ago |
| README.md | 7d ago |
PJM20N60TE
PJSEMI · MOSFETs · TO-252
PJM20N60TE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; gate-source voltage is rated at ±20 V (VGS) in the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal of the MOSFET; rated at 60 V drain-source voltage (VDS) and 20 A continuous drain current (ID) per the absolute maximum ratings. |
| 3 | Source | passive | Source terminal of the MOSFET; body diode forward current is rated at 20 A (IS) with forward voltage VSD of 1.2 V maximum at VGS=0V, IS=20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 20 | A | 1 | |||
| Drain Current-Pulsed | IDM | 80 | A | Pulse width limited by maximum junction temperature (Note 1) | 1 | ||
| Single Pulse Avalanche Energy | EAS | 25 | mJ | TJ=25℃, VDD=30V, VG=10V, RG=25Ω, L=0.5mH, IAS=6.1A (Note 2) | 1 | ||
| Maximum Power Dissipation | PD | 27.7 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 4.5 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | 26 | 33 | mΩ | VGS=10V,ID=10A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 31 | 45 | mΩ | VGS=4.5V,ID=5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 | ||
| Diode Forward Current | IS | 20 | A | 2 |
CAD (KiCad official)
- Symbol:
PJM20N60TE - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
pjm20n60te-etched.step/pjm20n60te-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm20n60te.step/pjm20n60te.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (5 pp, sha256
880a463a31133332, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).