# PJM13N30PA

**PJSEMI** · MOSFETs · SOP-8

PJM13N30PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel enhancement MOSFET, shared with pins 2 and 3. |
| 2 | Source | passive | Source terminal of the N-channel enhancement MOSFET, shared with pins 1 and 3. |
| 3 | Source | passive | Source terminal of the N-channel enhancement MOSFET, shared with pins 1 and 2. |
| 4 | Gate | input | Gate terminal that controls the MOSFET; the datasheet gives VGS limits of ±20 V. |
| 5 | Drain | passive | Drain terminal of the N-channel MOSFET, shared with pins 6, 7 and 8. |
| 6 | Drain | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 7 and 8. |
| 7 | Drain | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 6 and 8. |
| 8 | Drain | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 6 and 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-Resistance at VGS=10V | RDS(on) |  | 8 | 12 | mΩ | VGS=10V,ID=13A | 2 |
| Drain-Source On-Resistance at VGS=4.5V | RDS(on) |  | 12 | 18 | mΩ | VGS=4.5V,ID=10A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=13A | 2 |
| Diode Forward Current | IS |  |  | 13 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 13 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 52 | A | Note1 | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 35.7 | mJ | Note4 | 1 |
| Maximum Power Dissipation | PD |  |  | 3.5 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 35.7 |  | °C/W | Note2 | 1 |

## CAD (KiCad official)

- Symbol: `PJM13N30PA`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `pjm13n30pa-etched.step` / `pjm13n30pa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pjm13n30pa.step` / `pjm13n30pa.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PJSEMI datasheet](docs/pjm13n30pa-datasheet.pdf) (7 pp, sha256 `210ea1999214e416`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pjm13n30pa-datasheet.pdf)