component
PJM13N30PA
Public Made by Adomby adom
PJSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| page.json | 3h ago |
| pjm13n30pa-etched.glb | 3h ago |
| pjm13n30pa-etched.step | 3h ago |
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| pjm13n30pa.glb | 3h ago |
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PJM13N30PA
PJSEMI · MOSFETs · SOP-8
PJM13N30PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel enhancement MOSFET, shared with pins 2 and 3. |
| 2 | Source | passive | Source terminal of the N-channel enhancement MOSFET, shared with pins 1 and 3. |
| 3 | Source | passive | Source terminal of the N-channel enhancement MOSFET, shared with pins 1 and 2. |
| 4 | Gate | input | Gate terminal that controls the MOSFET; the datasheet gives VGS limits of ±20 V. |
| 5 | Drain | passive | Drain terminal of the N-channel MOSFET, shared with pins 6, 7 and 8. |
| 6 | Drain | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 7 and 8. |
| 7 | Drain | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 6 and 8. |
| 8 | Drain | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-Resistance at VGS=10V | RDS(on) | 8 | 12 | mΩ | VGS=10V,ID=13A | 2 | |
| Drain-Source On-Resistance at VGS=4.5V | RDS(on) | 12 | 18 | mΩ | VGS=4.5V,ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=13A | 2 | ||
| Diode Forward Current | IS | 13 | A | 2 | |||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 13 | A | 1 | |||
| Drain Current-Pulsed | IDM | 52 | A | Note1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 35.7 | mJ | Note4 | 1 | ||
| Maximum Power Dissipation | PD | 3.5 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 35.7 | °C/W | Note2 | 1 |
CAD (KiCad official)
- Symbol:
PJM13N30PA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
pjm13n30pa-etched.step/pjm13n30pa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm13n30pa.step/pjm13n30pa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (7 pp, sha256
210ea1999214e416, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).