# PJM10H03NSC

**PJSEMI** · MOSFETs · SOT-23-3

PJM10H03NSC from PJSEMI, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGS). |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, the reference for the gate-source voltage rating of ±20 V. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; rated for a drain-source voltage of 100 V and continuous drain current of 3 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 3 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 30 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 1.5 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 83 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) |  | 136 | 160 | mΩ | VGS=10V, ID=3A | 2 |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) |  | 140 | 170 | mΩ | VGS=4.5V, ID=3A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=3A | 2 |
| Diode Forward Current | IS |  |  | 3 | A | Surface mounted on FR4 board, t ≤ 10 sec | 2 |

## CAD (KiCad official)

- Symbol: `PJM10H03NSC`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `pjm10h03nsc-etched.step` / `pjm10h03nsc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pjm10h03nsc.step` / `pjm10h03nsc.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PJSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588945671956647936) (7 pp, sha256 `fff4cbb08df0cc3a`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pjm10h03nsc-datasheet.pdf)