component

PJM10H03NSC

Public Made by Adom

by adom

PJSEMI MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 22d ago
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page.json pjm10h03nsc: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 16d ago
pjm10h03nsc-etched.glb pjm10h03nsc: factory component page (tier=lcsc) · Ray 22d ago
pjm10h03nsc-etched.step pjm10h03nsc: factory component page (tier=lcsc) · Ray 22d ago
pjm10h03nsc-hero.glb pjm10h03nsc: hero GLB from the etched model (keeps the MPN mark) · Ray 22d ago
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README.md pjm10h03nsc: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 16d ago

PJM10H03NSC

PJSEMI · MOSFETs · SOT-23-3

PJM10H03NSC from PJSEMI, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGS).
2 Source passive Source terminal of the N-channel MOSFET, the reference for the gate-source voltage rating of ±20 V.
3 Drain passive Drain terminal of the N-channel MOSFET; rated for a drain-source voltage of 100 V and continuous drain current of 3 A.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 3 A 1
Drain Current-Pulsed IDM 30 A 1
Maximum Power Dissipation PD 1.5 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 83 ℃/W Surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance (VGS=10V) RDS(ON) 136 160 mΩ VGS=10V, ID=3A 2
Drain-Source On-State Resistance (VGS=4.5V) RDS(ON) 140 170 mΩ VGS=4.5V, ID=3A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=3A 2
Diode Forward Current IS 3 A Surface mounted on FR4 board, t ≤ 10 sec 2

CAD (KiCad official)

  • Symbol: PJM10H03NSC
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: pjm10h03nsc-etched.step / pjm10h03nsc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm10h03nsc.step / pjm10h03nsc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 fff4cbb08df0cc3a, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF