component
PJM08P40PA
Public Made by Adomby adom
PJSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PJM08P40PA
PJSEMI · MOSFETs · SOP-8
PJM08P40PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET; the pin description assigns pins 1, 2 and 3 to Source. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the pin description assigns pins 1, 2 and 3 to Source. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET; the pin description assigns pins 1, 2 and 3 to Source. |
| 4 | Gate | input | Gate terminal of the MOSFET; the gate-source voltage is rated at ±20 V (VGS). |
| 5 | Drain | passive | Drain terminal of the MOSFET; rated at -VDS 40 V and continuous drain current 8 A. |
| 6 | Drain | passive | Drain terminal of the MOSFET; rated at -VDS 40 V and continuous drain current 8 A. |
| 7 | Drain | passive | Drain terminal of the MOSFET; rated at -VDS 40 V and continuous drain current 8 A. |
| 8 | Drain | passive | Drain terminal of the MOSFET; rated at -VDS 40 V and continuous drain current 8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | -VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | -ID | 8 | A | 1 | |||
| Drain Current-Pulsed | -IDM | 30 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.8 | W | 1 | |||
| Single Pulse Avalanche Energy | EAS | 42 | mJ | VDD=-30V, VG=-10V, L=0.5mH, IAS=-13A, RG=25Ω, TJ=25℃ | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 69 | °C/W | Surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | -V(BR)DSS | 40 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | -IDSS | 1 | μA | VDS=-40V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | -VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | 25 | 35 | mΩ | VGS=-10V, ID=-8A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 32 | 45 | mΩ | VGS=-4.5V, ID=-8A | 2 | |
| Diode Forward Voltage | -VSD | 1.2 | V | VGS=0V, IS=-8A | 2 | ||
| Diode Forward Current | -IS | 8 | A | 2 | |||
| Forward Transconductance | gFS | 6 | S | VDS=-5V, ID=-1A | 2 | ||
| Input Capacitance | Ciss | 1392 | pF | VDS=-20V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 116 | pF | VDS=-20V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 98 | pF | VDS=-20V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 11.5 | nC | VDS=-15V, ID=-1A, VGS=-4.5V | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | VDS=-15V, ID=-1A, VGS=-4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 3.3 | nC | VDS=-15V, ID=-1A, VGS=-4.5V | 2 | ||
| Turn-on Delay Time | td(on) | 22 | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | 2 | ||
| Turn-on Rise Time | tr | 15.7 | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 59 | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | 2 | ||
| Turn-off Fall Time | tf | 5.5 | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | 2 | ||
| Gate Resistance | Rg | 12 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
PJM08P40PA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
pjm08p40pa-etched.step/pjm08p40pa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm08p40pa.step/pjm08p40pa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (5 pp, sha256
a28833b0cfccaa1f, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PJM08P40PA
**PJSEMI** · MOSFETs · SOP-8
PJM08P40PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET; the pin description assigns pins 1, 2 and 3 to Source. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the pin description assigns pins 1, 2 and 3 to Source. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET; the pin description assigns pins 1, 2 and 3 to Source. |
| 4 | Gate | input | Gate terminal of the MOSFET; the gate-source voltage is rated at ±20 V (VGS). |
| 5 | Drain | passive | Drain terminal of the MOSFET; rated at -VDS 40 V and continuous drain current 8 A. |
| 6 | Drain | passive | Drain terminal of the MOSFET; rated at -VDS 40 V and continuous drain current 8 A. |
| 7 | Drain | passive | Drain terminal of the MOSFET; rated at -VDS 40 V and continuous drain current 8 A. |
| 8 | Drain | passive | Drain terminal of the MOSFET; rated at -VDS 40 V and continuous drain current 8 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | -VDS | | | 40 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | -ID | | | 8 | A | | 1 |
| Drain Current-Pulsed | -IDM | | | 30 | A | | 1 |
| Maximum Power Dissipation | PD | | | 1.8 | W | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 42 | mJ | VDD=-30V, VG=-10V, L=0.5mH, IAS=-13A, RG=25Ω, TJ=25℃ | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 69 | °C/W | Surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | -V(BR)DSS | 40 | | | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | -IDSS | | | 1 | μA | VDS=-40V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | -VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 25 | 35 | mΩ | VGS=-10V, ID=-8A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 32 | 45 | mΩ | VGS=-4.5V, ID=-8A | 2 |
| Diode Forward Voltage | -VSD | | | 1.2 | V | VGS=0V, IS=-8A | 2 |
| Diode Forward Current | -IS | | | 8 | A | | 2 |
| Forward Transconductance | gFS | | 6 | | S | VDS=-5V, ID=-1A | 2 |
| Input Capacitance | Ciss | | 1392 | | pF | VDS=-20V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 116 | | pF | VDS=-20V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 98 | | pF | VDS=-20V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 11.5 | | nC | VDS=-15V, ID=-1A, VGS=-4.5V | 2 |
| Gate-Source Charge | Qgs | | 3.5 | | nC | VDS=-15V, ID=-1A, VGS=-4.5V | 2 |
| Gate-Drain Charge | Qgd | | 3.3 | | nC | VDS=-15V, ID=-1A, VGS=-4.5V | 2 |
| Turn-on Delay Time | td(on) | | 22 | | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | 2 |
| Turn-on Rise Time | tr | | 15.7 | | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | 2 |
| Turn-off Delay Time | td(off) | | 59 | | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | 2 |
| Turn-off Fall Time | tf | | 5.5 | | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | 2 |
| Gate Resistance | Rg | | 12 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `PJM08P40PA`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `pjm08p40pa-etched.step` / `pjm08p40pa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pjm08p40pa.step` / `pjm08p40pa.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [PJSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603392349632274432) (5 pp, sha256 `a28833b0cfccaa1f`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pjm08p40pa-datasheet.pdf)