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PDTD123TT

Nexperia · Digital Transistors · SOT-23

PDTD123TT from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 input (base) input Input (base) of the NPN transistor, connected to the internal bias resistor R1 (2.2 kΩ typical, 1.54 kΩ to 2.86 kΩ), with R2 left open.
2 GND (emitter) power_in Ground (emitter) reference terminal of the NPN transistor; the datasheet gives no further electrical limit for this pin.
3 output (collector) output Output (collector) of the transistor, rated for 500 mA output current with a collector-emitter voltage of 50 V maximum (open base).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage (open emitter) VCBO 50 V open emitter 4
collector-emitter voltage (open base) VCEO 50 V open base 4
emitter-base voltage (open collector) VEBO 5 V open collector 4
input voltage, positive VI 12 V positive 4
input voltage, negative VI -5 V negative 4
output current IO 500 mA 4
total power dissipation (SOT23) Ptot 250 mW Tamb ≤ 25 °C; device mounted on FR4 PCB, standard footprint 4
storage temperature Tstg -65 150 °C 4
junction temperature Tj 150 °C 4
ambient temperature Tamb -65 150 °C 4
thermal resistance from junction to ambient (SOT23) Rth(j-a) 500 K/W in free air; device mounted on FR4 PCB, single-sided copper, tin-plated, standard footprint 5
collector-base cut-off current ICBO 100 nA VCB = 40 V; IE = 0 A; Tamb = 25 °C 5
collector-emitter cut-off current ICEO 0.5 μA VCE = 50 V; IB = 0 A; Tamb = 25 °C 5
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 5
DC current gain hFE 100 300 - VCE = 5 V; IC = 50 mA; Tamb = 25 °C 5
collector-emitter saturation voltage VCEsat 0.3 V IC = 50 mA; IB = 2.5 mA; Tamb = 25 °C 5
bias resistor 1 (input) R1 1.54 2.2 2.86 kΩ R2 = open; Tamb = 25 °C 5

CAD (KiCad official)

  • Symbol: PDTD123TT
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pdtd123tt-etched.step / pdtd123tt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pdtd123tt.step / pdtd123tt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 a42e78e1da5fd34f, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF