component

PDTB114ETR

Public Made by Adom

by adom

Nexperia Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PDTB114ETR

Nexperia · Digital Transistors · SOT-23

PDTB114ETR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 input (base) input Input (base) of the built-in transistor, which is driven through bias resistor R1 (10 kΩ typ. for PDTB114ET); input voltage is limited to -50 V to +10 V per the limiting values.
2 GND (emitter) power_in Ground connection at the emitter of the built-in PNP transistor, with R2 (10 kΩ) connected between base and emitter.
3 output (collector) output Output (collector) of the built-in PNP transistor, rated for 500 mA output current and 50 V collector-emitter voltage (open base).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 50 V open emitter 3
collector-emitter voltage VCEO 50 V open base 3
emitter-base voltage VEBO 10 V open collector; PDTB114ET 3
input voltage VI -50 10 V PDTB114ET 3
output current IO 500 mA 3
total power dissipation Ptot 320 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint [1] 3
total power dissipation Ptot 460 mW Tamb ≤ 25 °C; FR4 PCB, 4-layer copper, standard footprint [2] 3
junction temperature Tj 175 °C 3
ambient temperature Tamb -55 175 °C 3
storage temperature Tstg -55 175 °C 3
thermal resistance from junction to ambient Rth(j-a) 470 K/W in free air; FR4 PCB, single-sided copper, standard footprint [1] 4
thermal resistance from junction to ambient Rth(j-a) 327 K/W in free air; FR4 PCB, 4-layer copper, standard footprint [2] 4
collector-base cut-off current ICBO 100 nA VCB = 40 V; IE = 0 A 6
collector-emitter cut-off current ICEO 0.5 A VCE = 50 V; IB = 0 A 6
emitter-base cut-off current IEBO 0.4 mA VEB = 5 V; IC = 0 A; PDTB114ET 6
DC current gain hFE 70 VCE = 5 V; IC = 50 mA; PDTB114ET 6
collector-emitter saturation voltage VCEsat 100 mV IC = 50 mA; IB = 2.5 mA 6
off-state input voltage VI(off) 0.6 1 1.5 V VCE = 5 V; IC = 100 A; PDTB114ET 6
on-state input voltage VI(on) 1 2.2 3 V VCE = 0.3 V; IC = 20 mA; PDTB114ET 6
bias resistor 1 (input) R1 7 10 13 k PDTB114ET 6
bias resistor ratio R2/R1 R2/R1 0.9 1 1.1 PDTB114ET 6

CAD (KiCad official)

  • Symbol: PDTB114ETR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pdtb114etr-etched.step / pdtb114etr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pdtb114etr.step / pdtb114etr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (18 pp, sha256 f04378662d3b464e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF