component
PC817X2YSZW
Public Made by Adomby adom
Sharp Microelectronics Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PC817X2YSZW
Sharp Microelectronics · Transistor, Photovoltaic Output Optoisolators · DIP-4
PC817X2YSZW from Sharp Microelectronics, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | passive | Anode of the input light-emitting diode; forward current IF is rated to 50 mA (peak IFM 1 A at pulse width ≤100 µs, duty ratio 0.001). |
| 2 | Cathode | passive | Cathode of the input light-emitting diode; the input reverse voltage is rated at VR = 6 V. |
| 3 | Emitter | passive | Emitter of the output phototransistor; the emitter-collector voltage is rated at VECO = 6 V. |
| 4 | Collector | passive | Collector of the output phototransistor; rated at VCEO = 80 V, collector current IC = 50 mA, and collector power dissipation PC = 150 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Sharp Microelectronics |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) | 0.1 | 0.2 | V | IF=20mA, IC=1mA | 6 | |
| Collector-emitter breakdown voltage | BVCEO | 80 | V | IC=0.1mA, IF=0 | 6 | ||
| Emitter-collector breakdown voltage | BVECO | 6 | V | IE=10μA, IF=0 | 6 | ||
| Dark current | ICEO | 100 | nA | VCE=50V, IF=0 | 6 | ||
| Forward voltage | VF | 1.2 | 1.4 | V | IF=20mA | 6 | |
| Peak forward voltage | VFM | 3 | V | IFM=0.5A | 6 | ||
| Reverse current | IR | 10 | μA | VR=4V | 6 | ||
| Terminal capacitance | Ct | 30 | 250 | pF | V=0, f=1kHz | 6 | |
| Floating capacitance | Cf | 0.6 | 1 | pF | V=0, f=1MHz | 6 | |
| Cut-off frequency | fc | 80 | kHz | VCE=5V, IC=2mA, RL=100Ω, -3dB | 6 | ||
| Rise time | tr | 4 | 18 | μs | VCE=2V, IC=2mA, RL=100Ω | 6 | |
| Fall time | tf | 3 | 18 | μs | 6 | ||
| Forward current | IF | 50 | mA | 6 | |||
| Peak forward current | IFM | 1 | A | Pulse width ≦100μs, Duty ratio 0.001 | 6 | ||
| Reverse voltage | VR | 6 | V | 6 | |||
| Power dissipation (input) | P | 70 | mW | 6 | |||
| Collector-emitter voltage | VCEO | 80 | V | 6 | |||
| Emitter-collector voltage | VECO | 6 | V | 6 | |||
| Collector current | IC | 50 | mA | 6 | |||
| Collector power dissipation | PC | 150 | mW | 6 | |||
| Total power dissipation | Ptot | 200 | mW | 6 | |||
| Operating temperature | Topr | -30 | 100 | °C | 6 | ||
| Storage temperature | Tstg | -55 | 125 | °C | 6 | ||
| Isolation voltage | Viso(rms) | 5 | kV | AC for 1 min, 40 to 60%RH | 6 | ||
| Soldering temperature | Tsol | 270 | °C | For 10 s | 6 | ||
| Maximum operating isolation voltage (VDE option) | VIORM | 890 | V | Peak; EN 60747-5-5 | 13 | ||
| Partial discharge test voltage, Diagram 1 (VDE option) | Vm | 1430 | V | Peak; Diagram 1, tp=10s, qc<=5pC | 13 | ||
| Partial discharge test voltage, Diagram 2 (VDE option) | Vm | 1670 | V | Peak; Diagram 2, tp=1s, qc<=5pC | 13 | ||
| Maximum over-voltage (VDE option) | Vini,a | 9000 | V | Peak; tINI=60s | 13 | ||
| Safety maximum case temperature (VDE option) | Tsi | 150 | °C | IF=0, PC=0 | 13 | ||
| Safety maximum input current (VDE option) | Isi | 200 | mA | PC=0 | 13 | ||
| Safety maximum electric power (VDE option) | Psi | 300 | mW | Output or total power dissipation | 13 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper Alloy | Pin material : Copper Alloy | 5 |
CAD (KiCad official)
- Symbol:
PC817X2YSZW - Footprint:
Package_DIP:DIP-4_W7.62mm - 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files:
pc817x2yszw-etched.step/pc817x2yszw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pc817x2yszw.step/pc817x2yszw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Sharp Microelectronics datasheet (15 pp, sha256
3f4e7b11a630676a, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PC817X2YSZW
**Sharp Microelectronics** · Transistor, Photovoltaic Output Optoisolators · DIP-4
PC817X2YSZW from Sharp Microelectronics, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | passive | Anode of the input light-emitting diode; forward current IF is rated to 50 mA (peak IFM 1 A at pulse width ≤100 µs, duty ratio 0.001). |
| 2 | Cathode | passive | Cathode of the input light-emitting diode; the input reverse voltage is rated at VR = 6 V. |
| 3 | Emitter | passive | Emitter of the output phototransistor; the emitter-collector voltage is rated at VECO = 6 V. |
| 4 | Collector | passive | Collector of the output phototransistor; rated at VCEO = 80 V, collector current IC = 50 mA, and collector power dissipation PC = 150 mW. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Sharp Microelectronics |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) | | 0.1 | 0.2 | V | IF=20mA, IC=1mA | 6 |
| Collector-emitter breakdown voltage | BVCEO | 80 | | | V | IC=0.1mA, IF=0 | 6 |
| Emitter-collector breakdown voltage | BVECO | 6 | | | V | IE=10μA, IF=0 | 6 |
| Dark current | ICEO | | | 100 | nA | VCE=50V, IF=0 | 6 |
| Forward voltage | VF | | 1.2 | 1.4 | V | IF=20mA | 6 |
| Peak forward voltage | VFM | | | 3 | V | IFM=0.5A | 6 |
| Reverse current | IR | | | 10 | μA | VR=4V | 6 |
| Terminal capacitance | Ct | | 30 | 250 | pF | V=0, f=1kHz | 6 |
| Floating capacitance | Cf | | 0.6 | 1 | pF | V=0, f=1MHz | 6 |
| Cut-off frequency | fc | | 80 | | kHz | VCE=5V, IC=2mA, RL=100Ω, -3dB | 6 |
| Rise time | tr | | 4 | 18 | μs | VCE=2V, IC=2mA, RL=100Ω | 6 |
| Fall time | tf | | 3 | 18 | μs | | 6 |
| Forward current | IF | | | 50 | mA | | 6 |
| Peak forward current | IFM | | | 1 | A | Pulse width ≦100μs, Duty ratio 0.001 | 6 |
| Reverse voltage | VR | | | 6 | V | | 6 |
| Power dissipation (input) | P | | | 70 | mW | | 6 |
| Collector-emitter voltage | VCEO | | | 80 | V | | 6 |
| Emitter-collector voltage | VECO | | | 6 | V | | 6 |
| Collector current | IC | | | 50 | mA | | 6 |
| Collector power dissipation | PC | | | 150 | mW | | 6 |
| Total power dissipation | Ptot | | | 200 | mW | | 6 |
| Operating temperature | Topr | -30 | | 100 | °C | | 6 |
| Storage temperature | Tstg | -55 | | 125 | °C | | 6 |
| Isolation voltage | Viso(rms) | | | 5 | kV | AC for 1 min, 40 to 60%RH | 6 |
| Soldering temperature | Tsol | | | 270 | °C | For 10 s | 6 |
| Maximum operating isolation voltage (VDE option) | VIORM | | | 890 | V | Peak; EN 60747-5-5 | 13 |
| Partial discharge test voltage, Diagram 1 (VDE option) | Vm | | | 1430 | V | Peak; Diagram 1, tp=10s, qc<=5pC | 13 |
| Partial discharge test voltage, Diagram 2 (VDE option) | Vm | | | 1670 | V | Peak; Diagram 2, tp=1s, qc<=5pC | 13 |
| Maximum over-voltage (VDE option) | Vini,a | | | 9000 | V | Peak; tINI=60s | 13 |
| Safety maximum case temperature (VDE option) | Tsi | | | 150 | °C | IF=0, PC=0 | 13 |
| Safety maximum input current (VDE option) | Isi | | | 200 | mA | PC=0 | 13 |
| Safety maximum electric power (VDE option) | Psi | | | 300 | mW | Output or total power dissipation | 13 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper Alloy | | Pin material : Copper Alloy | 5 |
## CAD (KiCad official)
- Symbol: `PC817X2YSZW`
- Footprint: `Package_DIP:DIP-4_W7.62mm`
- 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files: `pc817x2yszw-etched.step` / `pc817x2yszw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pc817x2yszw.step` / `pc817x2yszw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Sharp Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944022015004672) (15 pp, sha256 `3f4e7b11a630676a`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pc817x2yszw-datasheet.pdf)