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Generated by kicad-footprint-generator · KiCad file format 20260206

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PC816C

KTP · Transistor, Photovoltaic Output Optoisolators · DIP-4

PC816C from KTP, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Anode	passive	Infrared emitting diode anode; the input forward current is rated at 60 mA maximum and the reverse voltage at 6 V maximum.
2	Cathode	passive	Infrared emitting diode cathode; the input forward current is rated at 60 mA maximum and the reverse voltage at 6 V maximum.
3	Emitter	passive	Phototransistor emitter; the emitter-collector voltage is rated at 6 V maximum (VECO).
4	Collector	passive	Phototransistor collector; the collector-emitter voltage is rated at 35 V maximum (VCEO) and the collector current at 50 mA maximum.

Key specifications

Parameter	Value
Manufacturer	KTP
Package	DIP-4
Category	Optoisolators
Pins	4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Forward voltage	VF		1.2	1.4	V	IF = 20mA	3
Reverse current	IR			10	µA	VR = 4V	3
Input capacitance	Cin		30	250	pF	V = 0, f = 1kHz	3
Collector-Emitter dark current	ICEO			100	nA	VCE = 20V, IF = 0mA	3
Collector-Emitter breakdown voltage	BVCEO	35			V	IC = 0.1mA	3
Emitter-Collector breakdown voltage	BVECO	6			V	IE = 0.1mA	3
Current transfer ratio (PC816C rank)	CTR	200		400	%	IF = 5mA, VCE = 5V	3
Collector-Emitter saturation voltage	VCE(sat)		0.1	0.2	V	IF = 20mA, IC = 1mA	3
Floating capacitance	CIO		0.6	1	pF	VIO = 0, f = 1MHz	3
Rise time	tr			18	µs	VCE = 2V, IC = 2mA	3
Fall time	tf			18	µs	RL = 100	3
Forward current	IF			60	mA		2
Peak forward current	IFP			1	A	1us pulse	2
Reverse voltage	VR			6	V		2
Input power dissipation	PD			100	mW	Derating 2.9 mW/°C above Ta = 100°C	2
Output power dissipation	PC			150	mW	Derating 5.8 mW/°C above Ta = 100°C	2
Collector current	IC			50	mA		2
Collector-Emitter voltage	VCEO			35	V		2
Emitter-Collector voltage	VECO			6	V		2
Total power dissipation	PTOT			200	mW		2
Isolation voltage	VISO			5000	V rms	AC for 1 minute, R.H. = 40~60%	2
Operating temperature	TOPR	-55		110	°C		2
Storage temperature	TSTG	-55		125	°C		2
Soldering temperature	TSOL			260	°C	For 10 seconds	2

CAD (KiCad official)

Symbol: PC816C
Footprint: Package_DIP:DIP-4_W7.62mm
3D model: DIP-4 (KiCad packages3D, STEP)
3D model files: pc816c-etched.step / pc816c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pc816c.step / pc816c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: KTP datasheet (14 pp, sha256 46c28ce664a2ee45, retrieved 2026-10-15, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF