component

PC816C

Public Made by Adom

by adom

KTP Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

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PC816C

KTP · Transistor, Photovoltaic Output Optoisolators · DIP-4

PC816C from KTP, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode passive Infrared emitting diode anode; the input forward current is rated at 60 mA maximum and the reverse voltage at 6 V maximum.
2 Cathode passive Infrared emitting diode cathode; the input forward current is rated at 60 mA maximum and the reverse voltage at 6 V maximum.
3 Emitter passive Phototransistor emitter; the emitter-collector voltage is rated at 6 V maximum (VECO).
4 Collector passive Phototransistor collector; the collector-emitter voltage is rated at 35 V maximum (VCEO) and the collector current at 50 mA maximum.

Key specifications

Parameter Value
Manufacturer KTP
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward voltage VF 1.2 1.4 V IF = 20mA 3
Reverse current IR 10 µA VR = 4V 3
Input capacitance Cin 30 250 pF V = 0, f = 1kHz 3
Collector-Emitter dark current ICEO 100 nA VCE = 20V, IF = 0mA 3
Collector-Emitter breakdown voltage BVCEO 35 V IC = 0.1mA 3
Emitter-Collector breakdown voltage BVECO 6 V IE = 0.1mA 3
Current transfer ratio (PC816C rank) CTR 200 400 % IF = 5mA, VCE = 5V 3
Collector-Emitter saturation voltage VCE(sat) 0.1 0.2 V IF = 20mA, IC = 1mA 3
Floating capacitance CIO 0.6 1 pF VIO = 0, f = 1MHz 3
Rise time tr 18 µs VCE = 2V, IC = 2mA 3
Fall time tf 18 µs RL = 100 3
Forward current IF 60 mA 2
Peak forward current IFP 1 A 1us pulse 2
Reverse voltage VR 6 V 2
Input power dissipation PD 100 mW Derating 2.9 mW/°C above Ta = 100°C 2
Output power dissipation PC 150 mW Derating 5.8 mW/°C above Ta = 100°C 2
Collector current IC 50 mA 2
Collector-Emitter voltage VCEO 35 V 2
Emitter-Collector voltage VECO 6 V 2
Total power dissipation PTOT 200 mW 2
Isolation voltage VISO 5000 V rms AC for 1 minute, R.H. = 40~60% 2
Operating temperature TOPR -55 110 °C 2
Storage temperature TSTG -55 125 °C 2
Soldering temperature TSOL 260 °C For 10 seconds 2

CAD (KiCad official)

  • Symbol: PC816C
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: pc816c-etched.step / pc816c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pc816c.step / pc816c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KTP datasheet (14 pp, sha256 46c28ce664a2ee45, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF