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PBSS5330X

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PBSS5330X

Nexperia · Bipolar (BJT) · SOT-89

PBSS5330X from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the PNP transistor; the device limits are VEBO -6 V and IC -3 A continuous (ICM -5 A peak).
2 C passive Collector of the PNP transistor; limits are VCEO -30 V, IC -3 A continuous and ICM -5 A peak, with Ptot up to 1.6 W on a 7 cm2 ceramic PCB.
3 B passive Base of the PNP transistor; the base current limit is IB -0.5 A, and VCEsat is specified at IC = -3 A with IB = -300 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -30 V open emitter 3
Collector-emitter voltage VCEO -30 V open base 3
Emitter-base voltage VEBO -6 V open collector 3
Collector current IC -3 A 3
Peak collector current ICM -5 A limited by Tj(max) 3
Base current IB -0.5 A 3
Total power dissipation Ptot 550 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint [2] 3
Total power dissipation Ptot 1 W Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 1 cm2 [3] 3
Total power dissipation Ptot 1.4 W Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 6 cm2 [4] 3
Total power dissipation Ptot 1.6 W Tamb ≤ 25 °C; ceramic PCB 7 cm2 [1] 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance junction to ambient Rth(j-a) 225 K/W FR4 PCB, single-sided copper, standard footprint [1] 4
Thermal resistance junction to ambient Rth(j-a) 125 K/W FR4 PCB, mounting pad for collector 1 cm2 [2] 4
Thermal resistance junction to ambient Rth(j-a) 90 K/W FR4 PCB, mounting pad for collector 6 cm2 [3] 4
Thermal resistance junction to ambient Rth(j-a) 80 K/W ceramic PCB 7 cm2 [4] 4
Thermal resistance junction to solder point Rth(j-sp) 16 K/W 4
Collector-base cut-off current ICBO -100 nA VCB = -30 V; IE = 0 A; Tamb = 25 °C 6
Collector-base cut-off current ICBO -50 µA VCB = -30 V; IE = 0 A; Tj = 150 °C 6
Collector-emitter cut-off current ICES -100 nA VCE = -30 V; VBE = 0 V; Tamb = 25 °C 6
Emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 A; Tamb = 25 °C 6
DC current gain hFE 200 VCE = -2 V; IC = -0.1 A; Tamb = 25 °C 6
DC current gain hFE 175 450 VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
DC current gain hFE 140 VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
DC current gain hFE 100 VCE = -2 V; IC = -3 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
Collector-emitter saturation voltage VCEsat -70 mV IC = -0.5 A; IB = -50 mA; Tamb = 25 °C 6
Collector-emitter saturation voltage VCEsat -130 mV IC = -1 A; IB = -50 mA; Tamb = 25 °C 6
Collector-emitter saturation voltage VCEsat -240 mV IC = -2 A; IB = -100 mA; Tamb = 25 °C 6
Collector-emitter saturation voltage VCEsat -320 mV 6
Collector-emitter saturation resistance RCEsat 80 107 mΩ IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
Base-emitter saturation voltage VBEsat -1.1 V IC = -2 A; IB = -100 mA; Tamb = 25 °C 6
Base-emitter saturation voltage VBEsat -1.2 V IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 6
Base-emitter turn-on voltage VBEon -1 V VCE = -2 V; IC = -1 A; Tamb = 25 °C 6
Transition frequency fT 100 MHz VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C 6
Collector capacitance Cc 45 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 6

CAD (KiCad official)

  • Symbol: PBSS5330X
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: pbss5330x-etched.step / pbss5330x-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pbss5330x.step / pbss5330x.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 3992777562c76bf8, retrieved 2026-10-19, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF