component
PBSS5330X
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPBSS5330X
Nexperia · Bipolar (BJT) · SOT-89
PBSS5330X from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the PNP transistor; the device limits are VEBO -6 V and IC -3 A continuous (ICM -5 A peak). |
| 2 | C | passive | Collector of the PNP transistor; limits are VCEO -30 V, IC -3 A continuous and ICM -5 A peak, with Ptot up to 1.6 W on a 7 cm2 ceramic PCB. |
| 3 | B | passive | Base of the PNP transistor; the base current limit is IB -0.5 A, and VCEsat is specified at IC = -3 A with IB = -300 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -30 | V | open emitter | 3 | ||
| Collector-emitter voltage | VCEO | -30 | V | open base | 3 | ||
| Emitter-base voltage | VEBO | -6 | V | open collector | 3 | ||
| Collector current | IC | -3 | A | 3 | |||
| Peak collector current | ICM | -5 | A | limited by Tj(max) | 3 | ||
| Base current | IB | -0.5 | A | 3 | |||
| Total power dissipation | Ptot | 550 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint [2] | 3 | ||
| Total power dissipation | Ptot | 1 | W | Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 1 cm2 [3] | 3 | ||
| Total power dissipation | Ptot | 1.4 | W | Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 6 cm2 [4] | 3 | ||
| Total power dissipation | Ptot | 1.6 | W | Tamb ≤ 25 °C; ceramic PCB 7 cm2 [1] | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -65 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 225 | K/W | FR4 PCB, single-sided copper, standard footprint [1] | 4 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 125 | K/W | FR4 PCB, mounting pad for collector 1 cm2 [2] | 4 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 90 | K/W | FR4 PCB, mounting pad for collector 6 cm2 [3] | 4 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 80 | K/W | ceramic PCB 7 cm2 [4] | 4 | ||
| Thermal resistance junction to solder point | Rth(j-sp) | 16 | K/W | 4 | |||
| Collector-base cut-off current | ICBO | -100 | nA | VCB = -30 V; IE = 0 A; Tamb = 25 °C | 6 | ||
| Collector-base cut-off current | ICBO | -50 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 6 | ||
| Collector-emitter cut-off current | ICES | -100 | nA | VCE = -30 V; VBE = 0 V; Tamb = 25 °C | 6 | ||
| Emitter-base cut-off current | IEBO | -100 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 6 | ||
| DC current gain | hFE | 200 | VCE = -2 V; IC = -0.1 A; Tamb = 25 °C | 6 | |||
| DC current gain | hFE | 175 | 450 | VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | ||
| DC current gain | hFE | 140 | VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | |||
| DC current gain | hFE | 100 | VCE = -2 V; IC = -3 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | |||
| Collector-emitter saturation voltage | VCEsat | -70 | mV | IC = -0.5 A; IB = -50 mA; Tamb = 25 °C | 6 | ||
| Collector-emitter saturation voltage | VCEsat | -130 | mV | IC = -1 A; IB = -50 mA; Tamb = 25 °C | 6 | ||
| Collector-emitter saturation voltage | VCEsat | -240 | mV | IC = -2 A; IB = -100 mA; Tamb = 25 °C | 6 | ||
| Collector-emitter saturation voltage | VCEsat | -320 | mV | 6 | |||
| Collector-emitter saturation resistance | RCEsat | 80 | 107 | mΩ | IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | |
| Base-emitter saturation voltage | VBEsat | -1.1 | V | IC = -2 A; IB = -100 mA; Tamb = 25 °C | 6 | ||
| Base-emitter saturation voltage | VBEsat | -1.2 | V | IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | ||
| Base-emitter turn-on voltage | VBEon | -1 | V | VCE = -2 V; IC = -1 A; Tamb = 25 °C | 6 | ||
| Transition frequency | fT | 100 | MHz | VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C | 6 | ||
| Collector capacitance | Cc | 45 | pF | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PBSS5330X - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
pbss5330x-etched.step/pbss5330x-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss5330x.step/pbss5330x.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (13 pp, sha256
3992777562c76bf8, retrieved 2026-10-19, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).