# PBSS4320T-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-23

PBSS4320T-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base voltage is limited to 5 V (VEBO) and base current to 2 A. |
| 2 | E | passive | Emitter of the NPN transistor; the datasheet rates VEBO at 5 V. |
| 3 | C | passive | Collector of the NPN transistor; rated for VCEO 20 V, VCBO 20 V and IC 2.5 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | 20 | V | Ta=25°C unless otherwise noted | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 20 | V | Ta=25°C unless otherwise noted | 1 |
| Emitter-Base Voltage | VEBO |  |  | 5 | V | Ta=25°C unless otherwise noted | 1 |
| Collector Current | IC |  |  | 2.5 | A | Ta=25°C unless otherwise noted | 1 |
| Collector Power Dissipation | PC |  |  | 350 | mW | Ta=25°C unless otherwise noted | 1 |
| Operation Junction And Storage Temperature Range | TJ ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO |  | 20 |  | V | IC=100μA,IE=0 | 1 |
| Collector-emitter breakdown voltage (note 1) | V(BR)CEO |  | 20 |  | V | IC=10mA,IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO |  | 5 |  | V | IE=100μA ,IC=0 | 1 |
| Collector cut-off current | ICBO |  | 100 |  | nA | VCB=16V,IE=0 | 1 |
| Emitter cut-off current | IEBO |  | 100 |  | nA | VEB=4V,IC=0 | 1 |
| DC current gain (note 1) | hFE(1) |  | 200 |  |  | VCE=2V, IC=10mA | 1 |
| DC current gain (note 1) | hFE(2) |  | 300 |  |  | VCE=2V, IC=0.2A | 1 |
| DC current gain (note 1) | hFE(4) |  | 100 |  |  | VCE=2V, IC=4A | 1 |
| Collector-emitter saturation voltage (note 1) | VCE(sat)1 |  | 15 |  | mV | IC=0.1A,IB=10mA | 1 |
| Collector-emitter saturation voltage (note 1) | VCE(sat)2 |  | 150 |  | mV | IC=1A,IB=10mA | 1 |
| Collector-emitter saturation voltage (note 1) | VCE(sat)3 |  | 200 |  | mV | IC=2A,IB=0mA | 1 |
| Base-emitter saturation voltage (note 1) | VBE(sat) |  | 1 |  | V | IC=2A,IB=50mA | 1 |
| Base-emitter on voltage (note 1) | VBE(on) |  | 1 |  | V | IC=2A, VCE=2V | 1 |
| Output capacitance | Cob |  | 30 |  | pF | VCB=10V, f=1MHz | 1 |
| Turn-on time | t(on) |  | 170 |  | ns | VCC=10V, IC=1A, IB1=-IB2=10mA | 1 |
| Turn-off time | t(off) |  | 400 |  | ns | VCC=10V, IC=1A, IB1=-IB2=10mA | 1 |
| Transition frequency | fT |  | 100 |  | MHz | VCE=10V,IC=50mA, f=100MHz | 1 |
| Thermal Resistance From Junction To Ambient | RΘJA |  | 500 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `PBSS4320T-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pbss4320t-hxy-etched.step` / `pbss4320t-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pbss4320t-hxy.step` / `pbss4320t-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604445379371294720) (4 pp, sha256 `2986a9625e68192e`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pbss4320t-hxy-datasheet.pdf)